U411 Datasheet PDF


Part Number

U411

Description

monolithic dual n-channel JFET

Manufacture

Siliconix

Total Page 1 Pages
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Download U411 Datasheet PDF


Features Datasheet pdf .. monolithic dual n-channel JFETs H Si liconix ...lit ::) designed for • • o • FET Input Amplifiers ::) Low and Medium Frequency Amplifiers • Impedance Converters • Precisi on Instrumentation Amplifiers • Comp arators ABSOLUTE MAXIMUM RATINGS (25° C) Performance Curves NQP See Section 4 BENEFITS • Low Cost • Minimum Sys tem ~rror and Calibration 10 mV Offset Maximum (U410) 70 dB Minimum CMRR (U410 ) • Low Drift with Temperature 10 IlV /"C Maximum (U410) • Simplifies Ampli fier Design Low Output Conductance WTO- 71 See Section 6 Gate-To-Gate Voltage _........................ ±40 V Gate-D rain or Gate-Source Voltage ........... .... -40 V Gate Current . . . . . . . . . . . . . . . . . . . .
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U411 Datasheet
.. monolithic dual
n-channel JFETs
H
Siliconix
...lit
::)
designed for •••
o
• FET Input Amplifiers
::) • Low and Medium Frequency
Amplifiers
• Impedance Converters
• Precision Instrumentation
Amplifiers
• Comparators
ABSOLUTE MAXIMUM RATINGS (25°C)
Performance Curves NQP
See Section 4
BENEFITS
• Low Cost
• Minimum System ~rror and Calibration
10 mV Offset Maximum (U410)
70 dB Minimum CMRR (U410)
• Low Drift with Temperature
10 IlV/"C Maximum (U410)
• Simplifies Amplifier Design
Low Output Conductance
WTO-71
See Section 6
Gate-To-Gate Voltage _........................ ±40 V
Gate-Drain or Gate-Source Voltage ............... -40 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 50 mA
Total Package Dissipation (25°C Free-Air) _...... _375 mW
Power Derating ........................... 3.0 mW;oC
Storage Temperature Range .............. -65 to +150°C
Lead Temperature (1/16" from case for 10 seconds) ..300°C
JG, 00'2 7
0, .,
Bottom View
~
ci,:D2 0, "
.
ELECTRICAL CHARACTERISTICS (2.5°C unless othilrwise noted)
Characteristic
1 IGSS
1-
2 VGS(off)
1_ 5
T
3 A BVGSS
I-T
-4
I
C
lOSS
-5 IG
6 VGS
Gate Reverse Current
(Note 1)
Gate-Source Cutoff
Voltage
Gate-Source Breakdown
VnltAgp
Saturation Drain Current
(Note 2)
Gate Current (Note 1)
Gate-Source Voltage
7
I i 9f.
!loi'oy 90.
-N
11 ~ CISS
-I
-12 C C,..
13 en
Common-Source Forward
Transconductance
Common-Source Output
Conductance
Common-Source Input
Capacitance
Common-Source Reverse
Transfer Capacitance
Equivalent Short-Circuit
Input NOise Voltage
~14
lvGS1-V GS2)
Differential Gate-Source
Voltage
-T
15
~
alvGS1-VGS2 1 Gate-Source
AT Differential Dnft (Note 3)
f--I
16 ~ CMRA
Common-Mode ReJection
Ratio (Note 4)
U410
U411
U412
Min Typ Max Min Typ Max Min Typ Max
"200
"200
"200
Unit
pA
Test Conditions
VOS = 0, VGS = -30 V
-0.5
-40
-35 -0.5
-40
-35 -0.5
-40
-35 VOS=20V,IO= 1 nA
V
VOS = 0 V,IG = -lpA
05 50 0.5 5.0 0.5 50 mA VOS = 20V. VGS= OV
"200
"200
"200 pA
VOG = 20V,I0 = 200llA
-02 -3.0 -0.2 -30 -02 -3.0 V
1,000
600
4,000 1,000
1,200 600
20
5
4,000 1.000
1,200 600
20
5
4,000
1,200
20
5
~mho
VOS=20V.VGS=0 V
VOG = 20 V,IO = 200llA
f = 1 kHz
VOS= 20V. VGS - OV
VOG = 20 V,IO = 200llA
45 45 4.5
pF VOS=20V,VGS=OV f= 1 MHz
12 1.2 1.2
50
50
50
!lll.
vHZ
VOS = 20 V,IO = 200llA f'l00H-
10 20 40 mV VOG = 20 V,IO = 200llA
10
80
25
80
VOG = 20V,I0 = 200llA
80 pVrC
TA = 25°C to TB = 85°C
VOO = 10 V to VOO = 20 V
70 dB
10 = 200IlA
NOTES:
1. Approximately doubles for every lOoe Increase In TA
2. Pulse test duration = 300 /lSec, duty cycle'" 3%.
3. Measured at end potnts, TA and TB.
4 CMAR =20log10 [
avOO
d,aVOO = 10 V.
.el.IvGS1-V GS2)
NQP
3-126
Siliconix




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