U412

.. monolithic dual n-channel JFETs H Siliconix ...lit ::) designed for o FET Input Amplifiers ::) Low and Medium Frequency Amplifiers Impedance Converters Precision Instrumentation Amplifiers Comparators ABSOLUTE MAXIMUM RATINGS (25°C) Performance Curves NQP See Section 4 BENEFITS Low Cost Minimum System ~rror and Calibration 10 mV Offset Maximum (U410) 70 dB Minimum CMRR (U410) Low Drift with Temperature 10 IlV/"C Maximum (U410) Simplifies Amplifier Design Low Output Conductance WTO-71 See Section 6 Gate-To-Gate Voltage _........................ ±40 V Gate-Drain or Gate-Source Voltage ............... -40 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 50 mA Total Package Dissipation (25°C Free-Air) _...... _375 mW Power Derating ........................... 3.0 mW;oC Storage Temperature Range .............. -65 to +150°C Lead Temperature (1/16" from case for 10 seconds) ..300°C JG, 00'2 7 0, ., Bottom View ~ ci,:D2 0, " . ELECTRICAL CHARACTERISTICS (2.5°C unless othilrwise noted) Characteristic 1 IGSS 1- 2 VGS(off) 1_ 5 T 3 A BVGSS I-T -4 I C lOSS -5 IG 6 VGS Gate Reverse Current (Note 1) Gate-Source Cutoff Voltage Gate-Source Breakdown VnltAgp Saturation Drain Current (Note 2) Gate Current (Note 1) Gate-Source Voltage 7 I i 9f. !loi'oy 90. -N 11 ~ CISS -I -12 C C,.. 13 en Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverse Tra...