U427 Datasheet PDF


Part Number

U427

Description

monolithic dual n-channel JFET

Manufacture

Siliconix

Total Page 1 Pages
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Features Datasheet pdf monolithic dual n-channel JFETs designed for • • • • Very High Input Im pedance DiHerential Amplifiers Electrom eters • Impedance Converters Perform ance Curves NNT See Section 4 BENEFITS H --Siliconix • High Input Impedanc e IG = 5 pA (U427) • High Gain 9fs = 120 Mmho Minimum @ 10 = 30 MA • Low P ower Supply Operation VGS(off} = 2 V Ma ximum (U427) • Minimum System Error a nd Calibration 25 mV Maximum Offset AB SOLUTE MAXIMUM RATINGS (25°C) TO-78 Saa Section 6 Gate-to-Gate Voltage Gat e-Drain or Gate-Source Voltage Gate Cur rent =Device Dissipation (Each Side), T A 25°C ±40V -40 V 10 mA ~~G, G2 ( Derate 3.2 mW;oC to 150°C) . 400mW 8 , 82 =Total Device Dissipation, T A 25° C (Derate 6.0 mW;.
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U427 Datasheet
monolithic dual
n-channel JFETs
designed for
Very High Input Impedance
DiHerential Amplifiers
Electrometers
Impedance Converters
Performance Curves NNT
See Section 4
BENEFITS
H
--Siliconix
• High Input Impedance
IG = 5 pA (U427)
• High Gain 9fs = 120 Mmho Minimum @
10 = 30 MA
• Low Power Supply Operation
VGS(off} = 2 V Maximum (U427)
• Minimum System Error and Calibration
25 mV Maximum Offset
ABSOLUTE MAXIMUM RATINGS (25°C)
TO-78
Saa Section 6
Gate-to-Gate Voltage
Gate-Drain or Gate-Source Voltage
Gate Current
=Device Dissipation (Each Side), T A 25°C
±40V
-40 V
10 mA
~~G, G2
(Derate 3.2 mW;oC to 150°C) .
400mW
8, 82
=Total Device Dissipation, T A 25° C
(Derate 6.0 mW;oC to 150°C)
Storage Temperature Range
750mW
-65 to +150°C
ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted)
c S2
405 °2
o 0,
G1 b
0 G2
'0 7
01 ,0
S,
Bottom View
A , 02
0,
~,
Characteristic
1
I-
2
1-
3S
T
I-A
4T
I
ISc
-
-6
7
BVGSS
BVG1G2
IGSS
IG
VGSlottl
VGS
lOSS
Gate-Source Breakdown Voltage
Gate-Gate Breakdown Voltage
Gate Reverse Current (Note 1)
Gate Operating Current (Note 1)
Gate-Source Cutoff Voltage
Gate-Source Voltage
Saturation Dram Current
U427
U428
M,n Typ Max M,n Typ Max
-40 -60
-40 -60
±40 ±40
5 10
5 10
35
35
-0.4
-20 -0.4
-3,0
-1.8 -2.9
60 1000 60 800
Unit
V
pA
nA
pA
nA
V
/J. A
Test Conditions
IG = -1 /J.A, VOS = 0
IG = -1 /J.A, 10 = O.IS = 0
T = +2SOC
T - + 12SoC
VGS = -20 V. VOS = 0
T "" +25°C
T-+12SoC VOG= 10V,10=30/J.A
VDS= 10V.IO "" 1 nA
VOG = 10 V. 10 = 30/J.A
VOS=10V,VGS=0
-8
9
-0
10 y
9ts
90S
CISS
Common-Source Forward Transconductance
Common-Source Output Conductance
Common-Source Input Capacitance
300
-_--A" N Crss
9"_12IM
13 C 90S
-- 14
-
en
15 NF
Common-Source Reverse Transfer Capacitance
Common-Source Forward Transconductance 120
Common-Source Output Conductance
EqUivalent Short Circuit Input
NOise Voltage
Noise Figure
16 M
-A
17 T
C
-H
lB
IVGSI - VGS21
IVGSI - VGS21
LIT
CMRR
Differential Gate-Source Voltage
Differential Gate-Source Voltage
Change With Temperature(Note 2)
Common Mode Rejection RatiO
INote 31
800 300
30
3.0
1.5
350 120
05
20 50
10
1.0
25
40
90
500
/J.15
5.0
3.0
pF
1.5
VOS=10V,VGS=0
t= 1 kHz
t= 1 MHz
350
/J.15
10
20 70
10 nVNHZ
1.0 dB
VDG = 10 V, 10 = 30llA
I t = 10 Hz
40 mV VOG = 10 V,IO = 30/J.A
t = 1 kHz
t= 10Hz
t - 1 kHz
RG=10Mf!
80 /J.vfc
VDG = 10 V,IO = 30/J.A,
TA = _55°C. TB = 25°C, TC = 125°C
90 'I dB ID = 30 /J.A, VOG = 10 to 20 V
NOTES
1 ApprOXimately doubles for every 10"'C Increase In TA
2 Measured at end pOints TA. T8 andTc
I]3 CMRR = 2010910 [.0. V tl.VO~
I GS1 GS2
4 Case lead not connected
.o.VDD = 10 V
NNT
3-128
Siliconix




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