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X28HC64

Renesas

Byte Alterable EEPROM

X28HC64 64k, 8k x 8-Bit 5 Volt, Byte Alterable EEPROM The X28HC64 is an 8k x 8 EEPROM, fabricated with Intersil’s propri...


Renesas

X28HC64

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Description
X28HC64 64k, 8k x 8-Bit 5 Volt, Byte Alterable EEPROM The X28HC64 is an 8k x 8 EEPROM, fabricated with Intersil’s proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile memories, the X28HC64 is a 5V only device. It features the JEDEC approved pinout for byte-wide memories, compatible with industry standard RAMs. The X28HC64 supports a 64-byte page write operation, effectively providing a 32µs/byte write cycle, and enabling the entire memory to be typically written in 0.25 seconds. The X28HC64 also features DATA Polling and Toggle Bit Polling, two methods providing early end of write detection. In addition, the X28HC64 includes a user-optional software data protection mode that further enhances Intersil’s hardware write protect capability. Intersil EEPROMs are designed and tested for applications requiring extended endurance. Inherent data retention is greater than 100 years. Pin Configurations X28HC64 (28 LD PDIP, SOIC) TOP VIEW NC A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 VSS 1 28 2 27 3 26 4 25 5 24 6 23 7 X28HC64 22 8 21 9 20 10 19 11 18 12 17 13 16 14 15 VCC WE NC A8 A9 A11 OE A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 DATASHEET FN8109 Rev 4.00 June 27, 2016 Features 70ns access time Simple byte and page write - Single 5V supply - No external high voltages or VP-P control circuits - Self-timed - No erase before write - No complex programming algorithms - No overerase problem Low power CMOS - 40mA active current maximum ...




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