Power MOSFET. IRF7410PBF-1 Datasheet

IRF7410PBF-1 MOSFET. Datasheet pdf. Equivalent

Part IRF7410PBF-1
Description Power MOSFET
Feature VDS RDS(on) max (@VGS = -4.5V) RDS(on) max (@VGS = -2.5V) RDS(on) max (@VGS = -1.8V) Qg (typical) ID.
Manufacture International Rectifier
Total Page 10 Pages
Datasheet
Download IRF7410PBF-1 Datasheet



IRF7410PBF-1
VDS
RDS(on) max
(@VGS = -4.5V)
RDS(on) max
(@VGS = -2.5V)
RDS(on) max
(@VGS = -1.8V)
Qg (typical)
ID
(@TA = 25°C)
-12 V
7
9 mΩ
13
91 nC
-16 A
Features
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
IRF7410TRPbF-1
S1
S2
S3
G4
HEXFET® Power MOSFET
8
A
D
7D
6D
5D
Top View
SO-8
Benefits
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base Part Number
IRF7410PbF-1
Package Type
SO-8
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRF7410TRPbF-1
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Drain- Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current 
Power Dissipation ƒ
Power Dissipation ƒ
Linear Derating Factor
VGS
TJ, TSTG
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-12
-16
-13
-65
2.5
1.6
20
±8
-55 to +150
Units
V
A
W
mW/°C
V
°C
Thermal Resistance
RθJA
Parameter
Maximum Junction-to-Ambientƒ
Max.
50
Units
°C/W
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
October 16, 2014



IRF7410PBF-1
IRF7410TRPbF-1
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
ΔVGS(th)/ΔTJ
gfs
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Forward Transconductance
Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
-12 ––– –––
V VGS = 0V, ID = -250μA
––– 0.006 –––
––– ––– 7
––– ––– 9
––– ––– 13
V/°C
mΩ
Reference to 25°C, ID = -1mA
dVGS = -4.5V, ID = -16A
dVGS = -2.5V, ID = -13.6A
dVGS = -1.8V, ID = -11.5A
-0.4
–––
–––
-3.09
-0.9
–––
V
mV/°C
VDS
=
VGS,
ID
=
-250μA
55 ––– –––
S VDS = -10V, ID = -16A
––– ––– -1.0
––– ––– -25
VDS = -9.6V, VGS = 0V
μA VDS = -9.6V, VGS = 0V, TJ = 70°C
–––
–––
––– -100
––– 100
nA
VGS = -8V
VGS = 8V
––– 91
ID = -16A
d––– 18 ––– nC VDS =-9.6V
––– 25
VGS = -4.5V
––– 13 20
VDD = -6V VGS = -4.5V
––– 12 18
––– 271 407
––– 200 300
dns
ID =-1.0A
RD = 6Ω
RG = 6Ω
––– 8676 –––
VGS = 0V
––– 2344 ––– pF VDS = -10V
––– 1604 –––
ƒ = 1.0 MHz
Source-Drain Ratings and Characteristics
Symbol
Parameter
Min.
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
–––
–––
–––
trr Reverse Recovery Time
–––
Qrr Reverse Recovery Charge
–––
Typ.
–––
–––
–––
97
134
Max.
-2.5
-65
-1.2
145
201
Units
Conditions
MOSFET symbol
D
A
showing the
integral reverse
G
dp-n junction diode.
S
V TJ = 25°C, IS = -2.5A, VGS = 0V
dns TJ = 25°C
μC di/dt = -100A/μs
IF = -2.5A
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Pulse width 400μs; duty cycle 2%.
ƒ Surface mounted on 1 in square Cu board, t 10sec.
2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
October 16, 2014





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