J300 Datasheet PDF


Part Number

J300

Description

n-channel JFET

Manufacture

Siliconix

Total Page 1 Pages
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Download J300 Datasheet PDF


Features Datasheet pdf n-channel JFETs designed for • • • • VHF/UHF Amplifiers • Oscillators • Mixers H -S-ili-c-on-i-x Performa nce Curves NZF See Section 4 BENEFITS High Power Gain 20-23 dB Typical at 100 MHz, Common-Source 17_5-20_5 dB Typ ical at 100 MHz, Common-Gate • Low No ise Figure 1_3 dB Typical at 100 MHz High Dynamic Range Greater than 100 d B TO-92 Sea Section 6 ABSOLUTE MAXIMU M RATINGS (25°C) Gate-Drain or Gate-So urce Voltage ................-25 V Gate Current .............................. .. 10mA Total Device Dissipation at 25 C Ambient (Derate 3.27 mW/"C). _...... .... _.. _.. _... 360 mW Operating Temp erature Range....... _.. _.. -55 to 135 °C Storage Temperatu re Range_ ... __ ... _ . _ . _ . -5.
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J300 Datasheet
n-channel JFETs
designed for
VHF/UHF Amplifiers
Oscillators
Mixers
H
-S-ili-c-on-i-x
Performance Curves NZF
See Section 4
BENEFITS
• High Power Gain
20-23 dB Typical at 100 MHz,
Common-Source
17_5-20_5 dB Typical at 100 MHz,
Common-Gate
• Low Noise Figure
1_3 dB Typical at 100 MHz
• High Dynamic Range
Greater than 100 dB
TO-92
Sea Section 6
ABSOLUTE MAXIMUM RATINGS (25°C)
Gate-Drain or Gate-Source Voltage ................-25 V
Gate Current ................................ 10mA
Total Device Dissipation at 25°C Ambient
(Derate 3.27 mW/"C). _.......... _.. _.. _... 360 mW
Operating Temperature Range....... _.. _.. -55 to 135°C
Storage Temperatu re Range_ ... __ ... _ . _ . _ . -55 to 150°C
Lead Temperature Range
(1/16" from case for 10 seconds) .. _........... 300°C
.~:
GOs 0
D0
Bottom View
ELECTRICAL CHARACTERISTICS (25°C unless otherwise specified)
Plastic
G
s
D
--.!. S IGSS
-2 T
3
!-
A
T
BVGSS
: -4cI VGS(off)
5 IDSS
6 0 9fs
-y
-
7 N gas
A
B M Crss
_I
9 c Ciss
Characteristic
Min Max Unit
Gate Reverse Current
Gate·Source Breakdown Voltage
Gate·Source Cutoff Voltage (Note 1)
-0.5
-0.1
-25
-1.5 -7.0
nA
IlA
V
Saturation Dram Current (Note 1, 2)
Common·Source Forward Transconductance
(Note 1)
Common·Source Output Conductance
4 45
4500 9000
200
rnA
Ilmho
Common-Source Reverse Transfer
Capacitance
Common-Source Input Capacitance
1.7
pF
5.5
Test Conditions
VGS=-15V, VDS=O
TA= 125°C
IG = -1IlA, VDS = 0
VDS=10V,ID=1nA
VDS= 10V, VGS=O
VDS= 10V, ID = 5 rnA, f= 1 kHz
VDG= 10V, ID = 5 rnA, f= 1 MHz
-
Characteristic
IDSS
Saturation Drain
(Note 2) Current
J300A
J300B
J300C
J300D
Min Max Min Max Min Max ~Min Max
4 9 7 15 12 25 21 45
VGS{off)
Gate Source
Cutoff Voltage
-1.5 -3.0 -2.0 -4.0 -2.5 -5.0 -3.5 -7.0
Unit
rnA
V
Test Conditions
VDS=10V
VGS=OV
VDS=10V
ID=1nA
NOTES:
1. lOSS and VGSS(offl are selected into 5 range. and labeled according to above table.
2. Pulse test PW .; 300 JlS, duty cycle'; 3%.
NZF
Siliconix
3-57




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