MPF111

-.I.".". n-channel JFET ~ designed for General Purpose Amplifiers Analog Switches H Siliconix Performance Curves 'NRU NPAINH See Sedion 4 BENEFITS Low Cost Automatic Insertion Package ABSOLUTE MAXIMUM RATINGS (25°C) Drain-Gate Voltage ............................ 20V Source-Gate Voltage ........................... 20V Drain-Source Voltage........................... 20V Forward Gate Current ......................._. 10 mA Total Device Dissipation at 25°C Ambient (Derate 3.27 mWrC) ...................... 360 mW Operating Temperature Range ............. -55 to 135°C Storage Temperature Range............... -55 to 150°C Lead Temperature Range (1/16" from case for 10 seconds) ..............300°C TO-92 See Section 6 Plastic '4: G s D GOs 0 D0 Bottom View ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted) Characteristic I -1 5 T 2A 1"3 T I 4" C IGSS Gate-Reverse Current BVGSS Gate·Source Breakdown Voltage VGS(off) Gate·Source Cutoff Voltage lOSS Saturation Drain Current -5 -6 0 Y N 9fs gas -7 A M Ciss 8 I C Crss Common-Soutce Forward Transconductance Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Min -20 -0.5 0.5 500 Typ -.01 10 4.5 1.0 Max -100 -10.0 20 Unit nA V mA "mho pF Test Conditions VGS=-10V.VOS=0 IG=-lO"A.VOS=O VOS=10V,IO=1"A VOS = 10 V, VGS = 0 (Note 1) VOS=10V,VGS=0 f = 1 kHz f = 1 MHz NOTE: 1. Pulse test PW .;; 630 msec, duty cycle';; 10%. NRL/NPA/NH 3-...