n-channel JFET. PN4119 Datasheet

PN4119 JFET. Datasheet pdf. Equivalent

Part PN4119
Description n-channel JFET
Feature n-channel JFETs designed for • • • • Ultra-High Input Impedance Amplifiers Electrometers pH Meters S.
Manufacture Siliconix
Total Page 1 Pages
Datasheet
Download PN4119 Datasheet



PN4119
n-channel JFETs
designed for • • •
• Ultra-High Input
Impedance Amplifiers
Electrometers
pH Meters
Smoke Detectors
ABSOLUTE MAXIMUM RATINGS (25°C)
Reverse Gate-Drain or Gate-Source Voltage ......... -40 V
Gate Current ............................... 10 rnA
Total Device Dissipation at 25°C Ambient
(Derate 3.27 mW;oC) ...................... 360 mW
Operating Temperature Range ............. -55 to 135°C
Storage Temperature Range............... -55 to 150°C
Lead Temperature Range
(1/16" from case for 10 seconds) ..............300°C
.H
Siliconix
Performance Curves NT
See Sedion 4
BENEFITS
• Low Power
lOSS < 90 J1.A (PN4117)
• Minimum Circuit Loading
IGSS < 1 pA (PN4117A Series)
TO·92
See Section 6
,~:
GO
SC
oc
Bottom View
Plastic
"ZZ"
~~
----10"""1
--"ZZ"
~~
1J>0"J"">1
--"ZZ"
~~
o(X)
--"ZZ"
~~
o(X)
J>J>
ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted)
CharacteristIC
: -1
.~
3
S
T
-4"
A
T
-5
6
I
C
-
B
-
0
Y
9N
_A
M
10 I
-c
11
IGSS
IGS5
BVGSS
VGSloffl
lOSS
9fs
gos
CISS
Crss
Gate Reverse Current
PN4117 Series Only
Gate Reverse Current
PN4117A Senes Only
Gate-Source Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Dram Current
(Note 2)
Common-Source Forward
Transconductance (Note 2)
Common-Source Output
Conductance
Common-Source Input
Capal::1tance
Common·Source Reverse Transfer
Capacitance
PN4117
PN4117A
PN4118
PN4118A
PN4ll9
PN4119A
PN4120
PN412DA
Min Typ Max Min Typ Max Min Typ Max Min Typ Max
Umt
-10 -10 -10 -20 pA
-25 -25 -25 -50 nA
-1 -1 -1 -5 pA
-25 -25 -25
-10 nA
-40 -40
-06 -1 B -1
-40
-3 -2
-6 -06
-40 I
V
Test ConditIOns
VGS = ·20 V. VOS = 0
VGS = -20 V. VOS = 0
IG=-lpA.VOS=O
VOS-l0V.IO-l nA
100°C
10QoC
003 009 0.08 0.24 020 060 003
03 rnA VOS=10V.VGS=O
70
210 80
250 100
330 70
300
,umho
f"" 1 kHz
10 20
VOS= IOV,VGS=O
pF
15 15 15 15
f= 1 MHz
NOTES:
1. Due to symmetrical geometry. these units may be operated With source and drain leads interchanged.
2. This parameter is measured dUring a 2 ms Interval 100 ms after power IS applied.
NT
Siliconix
3-77





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