n-channel JFET. SST4302 Datasheet

SST4302 JFET. Datasheet pdf. Equivalent

Part SST4302
Description n-channel JFET
Feature n-channel JFETs designed for • • • • General Purpose Amplifiers H Siliconix Performance Curves NPA,.
Manufacture Siliconix
Total Page 1 Pages
Datasheet
Download SST4302 Datasheet



SST4302
n-channel JFETs
designed for
General Purpose Amplifiers
H
Siliconix
Performance Curves NPA, NH
See SecHon 4
BENEFITS
Low Cost
High Input Impedance
IG = 35 pA Typically
Low Noise
en = 5 nV1y'Hz Typically @ 1 kHz
ABSOLUTE MAXIMUM RATINGS (25°C)
.......Gate-Drain or Gate-Source Voltage (Note 1)
-30V
Gate Current ............................... 50 rnA
Total Device Dissipation at 25°C Ambient.
(Derate 3.27 mWtC) . ..................... 360 mW
Operating Temperature Range ............. -55 to 135°C
Storage Temperature Range............... -55 to 150°C
Lead Temperature Range
(1/16" from case for 10 seconds) ..............300°C
ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted)
TO-92
See Section 6
.~: Plastic
G
D
GO• D
DD
Bottom View
1
I- S
12-
T
A
! --2- T
I4-
I
e
5
6
1-
7
1-
8
I-
D
y
N
9A
I-
M
I
10 C
l-
11
-
12
Characteristic
IGSS
8VGSS
VGS(otf)
lOSS
91s
90s
Crss
C1SS
COG
Gate Reverse Current (Note 2)
Gate-Source Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Current (Note 31
Common-Source Forward
Transconductance (Note 31
Common-Source Output
Conductance
Common-5ource Reverse Transfer
Capacitance
Common-Source Input Capacl-
tance
Drain-Gate Capacitance
NF NOise FIgure
Common-Source Short Circuit
IVlsl Forward Transadmlttance
(Note 3)
PN4302
Mon Max
1
01
-30
-40
0.5 5.0
PN4303
Min Max
-1
--0.1
-30
~O
4.0 10
PN4304
Min Max
-1
--0.1
-30
-10
0.5 15
1000
2000
1000
50 50 50
333
666
222
2.0 20 3.0
700 1400
700
Upit
nA
~A
V
rnA
.umho
pF
dB
,umho
Tast Conditons
VGS = -10V.
VOS =0
TA = 85°C
IG = -1 ~A, VOS = 0
VOS = 20 V,IO = 10 nA
1=1 kHz
VOS=20V,
VGS =0
1= 1 MHz
VOG= 10V,
IS = a
VOS=10V,
VGS =0
1=140kHz
1=1 kHz,
Rgen =10M!l
VOS=20V,
VGS =0
1= 10MHz
NOTES:
1. Geometry IS symmetrical. Units may be operated with source and drain leads Interchanged
2. ApprOXimately doubles for every 10°C Increase In TA'
3. Pulse test dUration = 2 ms
NPA, NH
3-78 Silicanix





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