PN5163

n-channel JFET designed for Low and Medium Frequency Amplifiers BENEFITS Low Cost "...H Z Siliconix VI 0W ABSOLUTE MAXIMUM RATINGS (25°C) Gate·Drain or Gate·Source Voltage ............... -25V Gate Current (FWD) ......................... 10 mA Total Device Dissipation at 25°C Ambient (Derate 3.27 mW/"C)...................... 360 mW Operating Temperature Range ............. -55 to 135°C Storage Temperature Range............... -55 to 150°C Lead Temperature Range (1/16" from case for 10 seconds) ........... " .300°C TO·92 See Section 6 Plastic o~: GDs c DC Bottom View G S D *ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted) -J, 2 S IGSS "3 T A BVGSS i4"- VGS(off) 5 C VGS 6 loss - 7 rds(on) 8 9fs - - 9 D gos y 10 N 9fs -A -11 M Ciss I 12 C Crss - -13 NF 14 eN Characteristic Gate Reverse Current Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Gate·Source Voltage Saturation Drain Current Drain-Source ON Resistance Common.source Forward Transconductance Common-Source Output Conductance Common-Source Forward Transconductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Common-Source Spot Noise Figure Equivalent Short Circuit Input Noise Voltage Min -25 -{l.4 1.0 Max -10 -{l.S -8.0 -7.5 40 500 Unit nA p.A V mA n Test Conditions VGS=-15V,VOS=0 IG =-10 p.A, VOS = 0 VOS=15V,IO=1p.A VOS = 15 V, 10 = 100 p.A VOS = 15 V, VGS = 0 VGS=O,IO=O TA-85°C 2000 9000 f = 1 kHz 200 p.mho 1800 VOS=15V,VGS=0 20 pF 5.0 f ...