D-MOS FET. SD2100 Datasheet

SD2100 FET. Datasheet pdf. Equivalent

Part SD2100
Description n-channel D-MOS FET
Feature oo n-channel -C"4 Q en D-MOS FETs H Siliconix designed lor Military and Industrial Applications.
Manufacture Siliconix
Total Page 2 Pages
Datasheet
Download SD2100 Datasheet



SD2100
oo n-channel
-C"4
Q
en
D-MOS
FETs
H
Siliconix
designed lor Military and Industrial Applications.
VHF/UHF Amplifiers
Mixers
Oscillators
High-Speed Switching
Normally lIOn" Switch
Analog!Digital Switch
Multiplexer
•• Low-Voltage Switch
FEATURES
• High Figure-of-Merit gfs/C
• High Speed Switch « 1 Ins)
• High Gain
• Wide Dynamic Range-Input
=• Low Voltage Requirements
Battery Operation
BENEFITS
• High Frequency Gain
• High Speed Switching
• Low Distortion
ABSOLUTE MAXIMUM RATINGS (OC)
Drain Current .............................. 50 mA
Total Device Dissipation at 25°C
Case Temperature .......................... 1.2W
Storage Temperature Range ........ -65° to +200°C
Lead Temperature
(1"16 from case for 10 sec.) ................ 300°C
Operating Temperature Range ...... -55° to +150°C
TO·72
See Section 6
s
Go-l~C
D
~
l~\
DS
=DC ELECTRICAL CHARACTERISTICS (TA 25°C unless otherwise specified.)
Parameter
Test Conditions
Min Typ
1
SVDS
Drain-Source
Breakdown Voltage
'D ~ l;<A
VGS ~ VSS ~ 0
25
2 'GSS
3
4
~
VGS(offl
VGS
6
7
----a
'DSS
'DS
Gate Reverse Current
Gate-Source Cutoff Voltage
Gate-Source Voltage
Saturation Drain Current
Drain-Source ON Resistance
VGS ~ ±25V
VSS ~ 0
VDS ~ 10V, VSS ~ 0
'D ~ l;<A
VDG ~ lOV
VSS ~ 0
VDS ~ 10V
VGS ~ VSS ~ 0
I
I
VDS ~ 100 rnV
VSS ~ 0
I
I
'D ~ 5 rnA
'D ~ 20 rnA
VGS ~ 0
VGS ~ +5V
±0.01
-1.0
0 +0.5
+1.7
1.0
150
35
Ma.
±1.0
-2.0
+1.0
+2.5
5.0
200
50
Unit
V
nA
V
V
V
rnA
n
n
3-86 Siliconix



SD2100
AC ELECTRICAL CHARACTERISTICS
Parameter
Test Conditions
Min Typ Max Unit
9
--;0
gls
Forward Transconductance
VOG= 10V
110 = 20 rnA
VBS = 0, I = 1 KHz 10 = 5 rnA
10
8
14
10
20 rnrnho
mmho
11
gos
Common~Source Output
Conductance
VOG = 10V, VBS = 0
10 = 20 rnA, I = 1 MHz
80 200 /Lrnho
12
Ciss
Common-Source Input
Capacitance
VOG = 10V, VBS = 0
10 = 5 rnA, f = 1 MHz
13 Crss Reverse Transfer Capacitance
4.0 .0
1.5 2.5
pF
pF
SWITCHING CHARACTERISTIC
td(ONI- ns
VIN-2to+OV
VIN - 2 to +4V
VDD RL
Typ
Typ
5 670
10 670
15 670
1.2
1.3
1.5
0.8
0.8
0.8
tr - ns
-2 to +OV
-2 to +4V
Typ Typ
0.7 0.4
2.3 0.4
4.3 0.5
tOFf - ns
-2 to +OV
-2 to +4V
Typ Typ
4.0 6.0
4.4 5.3
4.4 4.8
..eft
S
oo
-
Silicanix
3-87





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