SD2110

n-channel dual enhancement mode -o lateral D-MOS FETs c::4 designed lor. · · Q CI) Wideband DiHerential Amplifiers Cascode High Slew Rate Amplifiers Single Ended High-Speed Amps High-Speed Analog Comparators Sample & Hold Ckts High-Speed Matched Analog Switches H Silicanix FEATURES High Figure-of-Merit gfs/C Ultra Low Feedback Capacitance 0.3 pF Low Output Capacitance Low Input (Gate) Leakage Non-Critical Operating CurrentNoltage Matched Characteristics BENEFITS High Frequency Performance High Slew Rate High Speed Switching Tight Temperature Tracking ABSOLUTE MAXIMUM RATINGS (25°C) Drain-to-Drain Voltage ....................... ±25V Drain-Source Voltage ........................ +25V Drain Current .............................. 50 mA Device Dissipation (Each Side), (Derate 3 mW/°C) ........................367 mW Total Device Dissipation (Derate 4 mW/oC) ........................ 500 mW Storage Temperature Range ........ -65 to +200°C Lead Temperature (1/16" from case for 10 seconds) ........... 300°C TO·78 See Section 6 5, 5, Bottom View 3-88 Silicanix ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted) Characteristic Min Typ Max Unit IGss BVOs Gate Reverse Current 0.05 Drain-Source Breakdown Voltage 25 1 nA V VGs(th) Gate-Source Threshold Voltage 0.1 0.8 2.0 V VGs Gate-Source Voltage Gate Operating IG CUrrent 1.9 3.0 0.05 1 V nA Common-Source gls Forward 7,000 9,000 15,000 ",mhos Transconductance Test Conditi...