D-MOS FET. SD2120 Datasheet

SD2120 FET. Datasheet pdf. Equivalent

Part SD2120
Description n-channel dual enhancement mode lateral D-MOS FET
Feature n-channel dual enhancement mode -o lateral D-MOS FETs c::4 designed lor. · · Q CI) • Wideband DiHere.
Manufacture Siliconix
Total Page 2 Pages
Datasheet
Download SD2120 Datasheet



SD2120
n-channel
dual enhancement mode
-o lateral D-MOS FETs
c::4 designed lor. · ·
Q
CI) • Wideband DiHerential
Amplifiers
• Cascode High Slew Rate
Amplifiers
• Single Ended
High-Speed Amps
• High-Speed Analog
Comparators
• Sample & Hold Ckts
• High-Speed Matched Analog
Switches
H
Silicanix
FEATURES
• High Figure-of-Merit gfs/C
• Ultra Low Feedback Capacitance 0.3 pF
• Low Output Capacitance
• Low Input (Gate) Leakage
• Non-Critical Operating CurrentNoltage
• Matched Characteristics
BENEFITS
• High Frequency Performance
• High Slew Rate
• High Speed Switching
• Tight Temperature Tracking
ABSOLUTE MAXIMUM RATINGS (25°C)
Drain-to-Drain Voltage ....................... ±25V
Drain-Source Voltage ........................ +25V
Drain Current .............................. 50 mA
Device Dissipation (Each Side),
(Derate 3 mW/°C) ........................367 mW
Total Device Dissipation
(Derate 4 mW/oC) ........................ 500 mW
Storage Temperature Range ........ -65 to +200°C
Lead Temperature
(1/16" from case for 10 seconds) ........... 300°C
TO·78
See Section 6
5,
5,
Bottom View
3-88 Silicanix



SD2120
ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted)
Characteristic
Min Typ Max
Unit
IGss
BVOs
Gate Reverse Current
0.05
Drain-Source
Breakdown Voltage
25
1
nA
V
VGs(th)
Gate-Source
Threshold Voltage
0.1 0.8 2.0
V
VGs Gate-Source Voltage
Gate Operating
IG CUrrent
1.9 3.0
0.05 1
V
nA
Common-Source
gls Forward
7,000
9,000
15,000
",mhos
Transconductance
Test Conditions
VGs ~ +15V, VOS ~ 0
10 ~ 1 "A. VGs ~ 0
VOS ~ VGs ~ 10V, 10 ~ 1 "A
VOG ~ 10V, 10 ~ 5 rnA
VOG ~ 10V, 10 ~ 5 rnA
VOs ~ 10V, VGs ~ 0, I ~ I KHz
gos
ROs(ON)
ciss
Common-Source
Output Conductance
Drain-Source
ReSistance
Common-Source
Input Capacitance
Common-Source
crss Reverse Transfer
Capacitance
Characteristic
M
A
IVGsl ~ VGs21
T
C
~lvGsl - VGs21
H ~T
I
N
glsl
G 9fs 2
Differential Gate-Source
Voltage
Gate-Source Differential
Drift3
Transconductance
Ratio2
NOTES:
1. Pulsewidth ~ 300 p.s, duty cycle::$:; 3%.
2 Assumes smaller value In numerator.
3. Measured at end points, TA and Ta.
20 100 p.mhos
60 0 10 ~ I rnA, VGs ~ 10V
3.2 5
05 1.2
pF
VOs ~ 10V, VGs ~ 0, I ~ I MHz
pF
sD2110
Min Max
10
25
25
0.95 1
sD2120
Min Max
20
50
50
0.95
I
Unit
rnV
"V/oC
"V/oc
Test Condition
VOG ~ 10V, 10 ~ 5 rnA
TA~25°C
TB ~ 125°C
TA ~ -55°C
TS ~ 25°C
I ~ 1 KHz
eft
-S
o
--
Siliconix
3-89





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