DMOS array. TPIC5203 Datasheet

TPIC5203 array. Datasheet pdf. Equivalent

Part TPIC5203
Description power DMOS array
Feature ą TPIC5203 2ĆCHANNEL INDEPENDENT GATEĆPROTECTED POWER DMOS ARRAY SLIS040 − SEPTEMBER 1994 • Low rDS.
Manufacture etcTI
Total Page 13 Pages
Datasheet
Download TPIC5203 Datasheet



TPIC5203
ą TPIC5203
2ĆCHANNEL INDEPENDENT GATEĆPROTECTED
POWER DMOS ARRAY
SLIS040 − SEPTEMBER 1994
Low rDS(on) . . . 0.26 Typ
High Voltage Output . . . 60 V
D PACKAGE
(TOP VIEW)
Extended ESD Capability . . . 4000 V
Pulsed Current . . . 8 A Per Channel
Fast Commutation Speed
GND
SOURCE1
GATE2
1
2
3
8 DRAIN1
7 GATE1
6 SOURCE2
DRAIN2 4
5 NC
description
NC − No internal connection
The TPIC5203 is a monolithic gate-protected
power DMOS array that consists of two
independent electrically isolated N-channel enhancement-mode DMOS transistors. Each transistor features
integrated high-current zener diodes (ZCXa and ZCXb) to prevent gate damage in the event that an overstress
condition occurs. These zener diodes also provide up to 4000 V of ESD protection when tested using the
human-body model of a 100-pF capacitor in series with a 1.5-kresistor.
The TPIC5203 is offered in a standard eight-pin small-outline surface-mount (D) package and is characterized
for operation over the case temperature range of − 40°C to 125°C.
schematic
DRAIN1
8
GATE2
3
DRAIN2
4
7
GATE1
ZC1b
ZC1a
Q1
D1
Z1
Q2 D2
Z2
ZC2b
ZC2a
2
SOURCE1
1
GND
6
SOURCE2
NOTE: For correct operation, no terminal pin may be taken below GND.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright 1994, Texas Instruments Incorporated
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
POST OFFICE BOX 1443 HOUSTON, TEXAS 77251−1443
2−1



TPIC5203
TPIC5203
2ĆCHANNEL INDEPENDENT GATEĆPROTECTED
POWER DMOS ARRAY
SLIS040 − SEPTEMBER 1994
ą
absolute maximum ratings over operating case temperature range (unless otherwise noted)
Drain-to-source voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V
Source-to-GND voltage (Q1, Q2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 V
Drain-to-GND voltage (Q1, Q2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 V
Gate-to-source voltage range, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −9 V to 18 V
Continuous drain current, each output, TC = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.6 A
Continuous source-to-drain diode current, TC = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.6 A
Pulsed drain current, each output, Imax, TC = 25°C (see Note 1 and Figure 15) . . . . . . . . . . . . . . . . . . . . . 8 A
Continuous gate-to-source zener diode current, TC = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 50 mA
Pulsed gate-to-source zener-diode current, TC = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 500 mA
Single-pulse avalanche energy, EAS, TC = 25°C (see Figures 4, 15, and 16) . . . . . . . . . . . . . . . . . . . 21.6 mJ
Continuous total dissipation, TC = 25°C (see Figure 15) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 962 mW
Operating virtual junction temperature range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40°C to 150°C
Operating case temperature range, TC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40°C to 125°C
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65°C to 150°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: Pulse duration = 10 ms, duty cycle = 2%
2−2
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
POST OFFICE BOX 1443 HOUSTON, TEXAS 77251−1443





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