DMOS array. TPIC5223L Datasheet

TPIC5223L array. Datasheet pdf. Equivalent

Part TPIC5223L
Description logic-level power DMOS array
Feature TPIC5223L 2-CHANNEL INDEPENDENT GATE-PROTECTED LOGIC-LEVEL POWER DMOS ARRAY SLIS043A – NOVEMBER 1994.
Manufacture etcTI
Total Page 13 Pages
Datasheet
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TPIC5223L
TPIC5223L
2-CHANNEL INDEPENDENT GATE-PROTECTED LOGIC-LEVEL
POWER DMOS ARRAY
SLIS043A – NOVEMBER 1994 – REVISED SEPTEMBER 1995
D Low rDS(on) . . . 0.38 Typ
D Voltage Output . . . 60 V
D Input Protection Circuitry . . . 18 V
D Pulsed Current . . . 3 A Per Channel
D Extended ESD Capability . . . 4000 V
D Direct Logic-Level Interface
D PACKAGE
(TOP VIEW)
GND
SOURCE1
GATE2
DRAIN2
1
2
3
4
8 DRAIN1
7 GATE1
6 SOURCE2
5 NC
description
NC – No internal connection
The TPIC5223L is a monolithic gate-protected logic-level power DMOS array that consists of two electrically
isolated independent N-channel enhancement-mode DMOS transistors. Each transistor features integrated
high-current zener diodes (ZCXa and ZCXb) to prevent gate damage in the event that an overstress condition
occurs. These zener diodes also provide up to 4000 V of ESD protection when tested using the human-body
model of a 100-pF capacitor in series with a 1.5-kresistor.
The TPIC5223L is offered in a standard eight-pin small-outline surface-mount (D) package and is characterized
for operation over the case temperature of – 40°C to 125°C.
schematic
DRAIN1
8
GATE2
3
DRAIN2
4
7
GATE1
ZC1b
ZC1a
Q1
D1
Z1
Q2
ZC2b
ZC2a
D2
Z2
2
SOURCE1
1
GND
6
SOURCE2
NOTE A: For correct operation, no terminal may be taken below GND.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
Copyright © 1995, Texas Instruments Incorporated
1



TPIC5223L
TPIC5223L
2-CHANNEL INDEPENDENT GATE-PROTECTED LOGIC-LEVEL
POWER DMOS ARRAY
SLIS043A – NOVEMBER 1994 – REVISED SEPTEMBER 1995
absolute maximum ratings over operating case temperature range (unless otherwise noted)
Drain-to-source voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V
Source-to-GND voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 V
Drain-to-GND voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 V
Gate-to-source voltage range, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 9 V to 18 V
Continuous drain current, each output, TC = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 A
Continuous source-to-drain diode current, TC = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 A
Pulsed drain current, each output, Imax, TC = 25°C (see Note 1 and Figure 15) . . . . . . . . . . . . . . . . . . . . . 3 A
Continuous gate-to-source zener diode current, TC = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 50 mA
Pulsed gate-to-source zener-diode current, TC = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 500 mA
Single-pulse avalanche energy, EAS, TC = 25°C (see Figures 4 and 16) . . . . . . . . . . . . . . . . . . . . . . . 108 mJ
Continuous total power dissipation, TC = 25°C (see Figure 15) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.95 W
Operating virtual junction temperature range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 40°C to 150°C
Operating case temperature range, TC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 40°C to 125°C
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 65°C to 150°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: Pulse duration = 10 ms, duty cycle = 2%
2 POST OFFICE BOX 655303 DALLAS, TEXAS 75265





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