DMOS ARRAY. TPIC5302 Datasheet

TPIC5302 ARRAY. Datasheet pdf. Equivalent

Part TPIC5302
Description 3-CHANNEL INDEPENDENT POWER DMOS ARRAY
Feature TPIC5302 3-CHANNEL INDEPENDENT POWER DMOS ARRAY • Low rDS(on) . . . 0.3 Ω Typ • High-Voltage Output.
Manufacture etcTI
Total Page 11 Pages
Datasheet
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TPIC5302
TPIC5302
3-CHANNEL INDEPENDENT POWER DMOS ARRAY
Low rDS(on) . . . 0.3 Typ
High-Voltage Outputs . . . 60 V
Pulsed Current . . . 7 A Per Channel
Fast Commutation Speed
description
The TPIC5302 is a monolithic power DMOS array
that consists of three electrically isolated
independent N-channel enhancement-mode
DMOS transistors. The TPIC5302 is offered in a
standard 16-pin small-outline surface-mount (D)
package.
The TPIC5302 is characterized for operation over
the case temperature range of – 40°C to 125°C.
schematic
DRAIN1
15, 16
GATE2
11
DRAIN2
12, 13
SLIS029B – APRIL 1994 – REVISED SEPTEMBER 1995
D PACKAGE
(TOP VIEW)
GND
SOURCE1
SOURCE1
SOURCE2
SOURCE2
SOURCE3
SOURCE3
GATE3
1
2
3
4
5
6
7
8
16 DRAIN1
15 DRAIN1
14 GATE1
13 DRAIN2
12 DRAIN2
11 GATE2
10 DRAIN3
9 DRAIN3
GATE3
8
DRAIN3
9, 10
Q1
GATE1 14
D1
Z1
Q2
D2
Z2
Q3
D3
Z3
2, 3
SOURCE1
1
GND
4, 5
SOURCE2
6, 7
SOURCE3
absolute maximum ratings over operating case temperature range (unless otherwise noted)
Drain-to-source voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V
Source-to-GND voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 V
Drain-to-GND voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 V
Gate-to-source voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 20 V
Continuous drain current, each output, all outputs on, TC = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.4 A
Continuous source-to-drain diode current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.4 A
Pulsed drain current, each output, TC = 25°C (see Note 1 and Figure 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 A
Single-pulse avalanche energy, EAS, TC = 25°C (see Figure 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10.5 mJ
Continuous total power dissipation at (or below) TC = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1087 mW
Operating virtual junction temperature range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 40°C to 150°C
Operating case temperature range, TC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 40°C to 125°C
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 65°C to 150°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: Pulse duration = 10 ms and duty cycle = 2%
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
Copyright © 1995, Texas Instruments Incorporated
1



TPIC5302
TPIC5302
3-CHANNEL INDEPENDENT POWER DMOS ARRAY
SLIS029B – APRIL 1994 – REVISED SEPTEMBER 1995
electrical characteristics, TC = 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP
V(BR)DSX
VGS(th)
V(BR)
Drain-to-source breakdown voltage
Gate-to-source threshold voltage
Reverse drain-to-GND breakdown voltage (across
D1, D2, and D3)
ID = 250 µA,
ID = 1 mA,
VGS = 0
VDS = VGS
Drain-to-GND current = 250 µA
60
1.5 1.85
100
VDS(on) Drain-to-source on-state voltage
ID = 1.4 A,
VGS = 10 V,
See Notes 2 and 3
0.42
VF(SD)
Forward on-state voltage, source-to-drain
IS = 1.4 A,
VGS = 0 (Z1, Z2, Z3),
See Notes 2 and 3
0.9
VF
IDSS
IGSSF
IGSSR
Ilkg
rDS(on)
Forward on-state voltage, GND-to-drain
Zero-gate-voltage drain current
Forward gate current, drain short circuited to source
Reverse gate current, drain short circuited to source
Leakage current, drain-to-GND
Static drain-to-source on-state resistance
ID = 1.4 A
VDS = 48 V,
VGS = 0
VGS = 16 V,
VSG = 16 V,
VR = 48 V
VGS = 10 V,
ID = 1.4 A,
See Notes 2 and 3
and Figures 6 and 7
TC = 25°C
TC = 125°C
VDS = 0
VDS = 0
TC = 25°C
TC = 125°C
TC = 25°C
TC = 125°C
4.8
0.05
0.5
10
10
0.05
0.5
0.3
0.41
gfs Forward transconductance
VDS = 10 V,
ID = 0.7 A,
See Notes 2 and 3
1.15 1.41
Ciss
Coss
Crss
Short-circuit input capacitance, common source
Short-circuit output capacitance, common source
Short-circuit reverse-transfer capacitance,
common source
VDS = 25 V,
f = 1 MHz
VGS = 0,
135
80
30
NOTES: 2. Technique should limit TJ – TC to 10°C maximum and pulse duration 5 ms.
3. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts.
MAX
2.2
0.49
1.1
1
10
100
100
1
10
0.35
0.5
170
100
40
UNIT
V
V
V
V
V
V
µA
nA
nA
µA
S
pF
source-to-drain diode characteristics, TC = 25°C
PARAMETER
TEST CONDITIONS
trr(SD) Reverse-recovery time
QRR Total diode charge
IS = 0.5 A, VGS = 0, VDS = 48 V,
di/dt = 100 A /µs,
See Figure 1
MIN TYP MAX UNIT
35 ns
0.04 µC
GND-to-drain diode characteristics, TC = 25°C (see schematic, D1, D2, and D3)
PARAMETER
TEST CONDITIONS
MIN TYP
trr
QRR
Reverse-recovery time
Total diode charge
IF = 0.5 A,
di/dt = 100 A /µs,
VDS = 48 V,
See Figure 1
130
0.4
MAX
UNIT
ns
µC
2 POST OFFICE BOX 655303 DALLAS, TEXAS 75265





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