DMOS array. TPIC5322L Datasheet

TPIC5322L array. Datasheet pdf. Equivalent

Part TPIC5322L
Description logic-level power DMOS array
Feature TPIC5322L 3ĆCHANNEL INDEPENDENT LOGICĆLEVEL POWER DMOS ARRAY D Low rDS(on) . . . 0.45 Ω Typ D High-.
Manufacture etcTI
Total Page 12 Pages
Datasheet
Download TPIC5322L Datasheet



TPIC5322L
TPIC5322L
3ĆCHANNEL INDEPENDENT LOGICĆLEVEL POWER DMOS ARRAY
D Low rDS(on) . . . 0.45 Typ
D High-Voltage Outputs . . . 60 V
D Pulsed Current . . . 3 A Per Channel
D Fast Commutation Speed
D Direct Logic-Level Interface
description
The TPIC5322L is a monolithic logic-level power
DMOS array that consists of three electrically
isolated independent N-channel enhancement-
mode DMOS transistors.
The TPIC5322L is offered in a standard 16-pin
small-outline surface-mount (D) package and is
characterized for operation over the case
temperature range of −40°C to 125°C.
SLIS034A − JUNE 1994 − REVISED NOVEMBER 1994
D PACKAGE
(TOP VIEW)
GND
SOURCE1
SOURCE1
SOURCE2
SOURCE2
SOURCE3
SOURCE3
GATE3
1
2
3
4
5
6
7
8
16 DRAIN1
15 DRAIN1
14 GATE1
13 DRAIN2
12 DRAIN2
11 GATE2
10 DRAIN3
9 DRAIN3
schematic
DRAIN1
15, 16
GATE2
11
DRAIN2
12, 13
GATE3
8
DRAIN3
9, 10
Q1
GATE1 14
D1
Z1
Q2
D2
Z2
Q3
D3
Z3
2, 3
SOURCE1
1
GND
4, 5
SOURCE2
6, 7
SOURCE3
absolute maximum ratings over operating case temperature range (unless otherwise noted)
Drain-to-source voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V
Source-to-GND voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 V
Drain-to-GND voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 V
Gate-to-source voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 20 V
Continuous drain current, each output, all outputs on, TC = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 A
Continuous source-to-drain diode current, TC = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 A
Pulsed drain current, each output, Imax, TC = 25°C (see Note 1 and Figure 15) . . . . . . . . . . . . . . . . . . . . . 3 A
Single-pulse avalanche energy, EAS, TC = 25°C (see Figure 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40.5 mJ
Continuous total power dissipation at (or below) TC = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.09 W
Operating virtual junction temperature range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40°C to 150°C
Operating case temperature range, TC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40°C to 125°C
Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65°C to 150°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: Pulse duration = 10 ms and duty cycle = 2%.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright 1994, Texas Instruments Incorporated
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
POST OFFICE BOX 1443 HOUSTON, TEXAS 77251−1443
1



TPIC5322L
TPIC5322L
3ĆCHANNEL INDEPENDENT LOGICĆLEVEL POWER DMOS ARRAY
SLIS034A − JUNE 1994 − REVISED NOVEMBER 1994
electrical characteristics, TC = 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP
V(BR)DSX Drain-to-source breakdown voltage
VGS(th) Gate-to-source threshold voltage
ID = 250 µA,
ID = 1 mA,
See Figure 5
VGS = 0
VDS = VGS,
60
1.5 1.85
V(BR)
Reverse drain-to-GND breakdown voltage (across
D1, D2, and D3)
Drain-to-GND current = 250 µA
100
VDS(on) Drain-to-source on-state voltage
ID = 1 A,
VGS = 5 V,
See Notes 2 and 3
0.45
VF(SD)
Forward on-state voltage, source-to-drain
IS = 1 A,
VGS = 0,
See Notes 2 and 3 and Figure 12
0.85
VF
IDSS
IGSSF
Forward on-state voltage, GND-to-drain
Zero-gate-voltage drain current
Forward gate current, drain short circuited to
source
ID = 1 A
VDS = 48 V,
VGS = 0
VGS = 16 V,
TC = 25°C
TC = 125°C
VDS = 0
3.7
0.05
0.5
10
IGSSR
Reverse gate current, drain short circuited to
source
VSG = 16 V,
VDS = 0
10
Ilkg Leakage current, drain-to-GND
rDS(on) Static drain-to-source on-state resistance
VDGND = 48 V
VGS = 5 V,
ID = 1 A,
See Notes 2 and 3
and Figures 6 and 7
TC = 25°C
TC = 125°C
TC = 25°C
TC = 125°C
0.05
0.5
0.45
0.7
gfs Forward transconductance
VDS = 10 V,
ID = 0.5 A,
See Notes 2 and 3 and Figure 9
1 1.24
Ciss
Coss
Crss
Short-circuit input capacitance, common source
Short-circuit output capacitance, common source
Short-circuit reverse-transfer capacitance,
common source
VDS = 25 V,
f = 1 MHz,
VGS = 0,
See Figure 11
135
80
30
NOTES: 2. Technique should limit TJ − TC to 10°C maximum.
3. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts.
MAX
2.2
0.525
1
1
10
100
100
1
10
0.525
0.78
170
100
40
UNIT
V
V
V
V
V
V
µA
nA
nA
µA
S
pF
source-to-drain and GND-to-drain diode characteristics, TC = 25°C
PARAMETER
TEST CONDITIONS
MIN TYP MAX UNIT
trr Reverse-recovery time
QRR Total diode charge
IS = 0.5 A,
VDS = 48 V,
VGS = 0,
di/dt = 100 A /µs,
See Figures 1 and 14
Z1, Z2, Z3
D1, D2, D3
Z1, Z2,Z3
D1, D2, D2
35
110
0.035
0.35
ns
µC
2 POST OFFICE BOX 655303 DALLAS, TEXAS 75265
POST OFFICE BOX 1443 HOUSTON, TEXAS 77251−1443





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)