DMOS array. TPIC5323L Datasheet

TPIC5323L array. Datasheet pdf. Equivalent

Part TPIC5323L
Description logic-level power DMOS array
Feature TPIC5323L 3-CHANNEL INDEPENDENT GATE-PROTECTED LOGIC-LEVEL POWER DMOS ARRAY SLIS044A – NOVEMBER 1994.
Manufacture etcTI
Total Page 13 Pages
Datasheet
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TPIC5323L
TPIC5323L
3-CHANNEL INDEPENDENT GATE-PROTECTED LOGIC-LEVEL
POWER DMOS ARRAY
SLIS044A – NOVEMBER 1994 – REVISED SEPTEMBER 1995
D Low rDS(on) . . . 0.6 Typ
D Voltage Output . . . 60 V
D PACKAGE
(TOP VIEW)
D Input Protection Circuitry . . . 18 V
D Pulsed Current . . . 3 A Per Channel
D Extended ESD Capability . . . 4000 V
D Direct Logic-Level Interface
DRAIN2
DRAIN2
SOURCE2
SOURCE2
1
2
3
4
16 GATE1
15 SOURCE1
14 SOURCE1
13 DRAIN1
GATE2 5 12 DRAIN1
description
DRAIN3 6 11 SOURCE3
The TPIC5323L is a monolithic gate-protected
logic-level power DMOS array that consists of
DRAIN3 7
GND 8
10 SOURCE3
9 GATE3
three electrically isolated independent N-channel
enhancement-mode DMOS transistors. Each transistor features integrated high-current zener diodes (ZCXa
and ZCXb) to prevent gate damage in the event that an overstress condition occurs. These zener diodes also
provide up to 4000 V of ESD protection when tested using the human-body model of a 100-pF capacitor in series
with a 1.5-kresistor.
The TPIC5323L is offered in a standard 16-pin small-outline surface-mount (D) package and is characterized
for operation over the case temperature of – 40°C to 125°C.
schematic
DRAIN1
12, 13
GATE2
5
DRAIN2
1, 2
GATE3
9
DRAIN3
6, 7
Q1
GATE1 16
ZC1b
ZC1a
D1 Q2
Z1
ZC2b
ZC2a
D2 Q3
Z2
ZC3b
ZC3a
D3
Z3
14, 15
8
SOURCE1 GND
3, 4
SOURCE2
NOTE A: For correct operation, no terminal can be taken below GND.
10, 11
SOURCE3
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
Copyright © 1995, Texas Instruments Incorporated
1



TPIC5323L
TPIC5323L
3-CHANNEL INDEPENDENT GATE-PROTECTED
SLIS044A – NOVEMBER 1994 – REVISED SEPTEMBER 1995
absolute maximum ratings over operating case temperature range (unless otherwise noted)
Drain-to-source voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V
Source-to-GND voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 V
Drain-to-GND voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 V
Gate-to-source voltage range, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 9 V to 18 V
Continuous drain current, each output, TC = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 A
Continuous source-to-drain diode current, TC = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 A
Pulsed drain current, each output, Imax, TC = 25°C (see Note 1 and Figure 15) . . . . . . . . . . . . . . . . . . . . . 3 A
Continuous gate-to-source zener diode current, TC = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 50 mA
Pulsed gate-to-source zener diode current, TC = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 500 mA
Single-pulse avalanche energy, EAS, TC = 25°C (see Figures 4 and 16) . . . . . . . . . . . . . . . . . . . . . . . 22.5 mJ
Continuous total power dissipation, TC = 25°C (see Figure 15) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.09 W
Operating virtual junction temperature range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 40°C to 150°C
Operating case temperature range, TC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 40°C to 125°C
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 65°C to 150°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: Pulse duration = 10 ms, duty cycle = 2%
2 POST OFFICE BOX 655303 DALLAS, TEXAS 75265





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