DMOS array. TPIC5401 Datasheet

TPIC5401 array. Datasheet pdf. Equivalent

Part TPIC5401
Description power DMOS array
Feature D Low rDS(on) . . . 0.3 Ω Typ D High Voltage Output . . . 60 V D Extended ESD Capability . . . 4000 .
Manufacture etcTI
Total Page 17 Pages
Datasheet
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TPIC5401
D Low rDS(on) . . . 0.3 Typ
D High Voltage Output . . . 60 V
D Extended ESD Capability . . . 4000 V
TPIC5401
H-BRIDGE GATE-PROTECTED
POWER DMOS ARRAY
SLIS024A – DECEMBER 1993 – REVISED MARCH 1994
D Pulsed Current . . . 10 A Per Channel
D Fast Commutation Speed
description
The TPIC5401 is a monolithic gate-protected power DMOS array that consists of four N-channel
enhancement-mode DMOS transistors, two of which are configured with a common source. Each transistor
features integrated high-current zener diodes (ZCXa and ZCXb) to prevent gate damage in the event that an
overstress condition occurs. These zener diodes also provide up to 4000 V of ESD protection when tested using
the human-body model of a 100-pF capacitor in series with a 1.5-kresistor.
The TPIC5401 is offered in a 16-pin thermally enhanced dual-in-line (NE) package and a 20-pin wide-body
surface-mount (DW) package and is characterized for operation over the case temperature range of – 40°C to
125°C.
NE PACKAGE
(TOP VIEW)
DW PACKAGE
(TOP VIEW)
DRAIN2
SOURCE2/GND
GATE2
GND
GND
GATE4
SOURCE4/GND
DRAIN4
1
2
3
4
5
6
7
8
16 SOURCE1
15 DRAIN1
14 GATE1
13 GND
12 GND
11 GATE3
10 DRAIN3
9 SOURCE3
GND
SOURCE4/GND
GATE4
NC
DRAIN4
SOURCE3
DRAIN3
GATE3
NC
NC
1
2
3
4
5
6
7
8
9
10
20 SOURCE2/GND
19 GATE2
18 NC
17 NC
16 DRAIN2
15 SOURCE1
14 DRAIN1
13 GATE1
12 NC
11 NC
NC – No internal connection
schematic
DRAIN1
GATE1
ZC1b
ZC1a
SOURCE1
DRAIN2
GATE2
ZC2b
ZC2a
Q1
Q2
Z1
Z2
D1 D2
DRAIN3
Q3
Z3
GATE3
ZC3b
ZC3a
SOURCE3
DRAIN4
Q4
Z4 GATE4
ZC4b
ZC4a
GND, SOURCE2, SOURCE4
NOTE: For correct operation, no terminal pin may be taken below GND.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
Copyright © 1994, Texas Instruments Incorporated
1



TPIC5401
TPIC5401
H-BRIDGE GATE-PROTECTED
POWER DMOS ARRAY
SLIS024A – DECEMBER 1993 – REVISED MARCH 1994
absolute maximum ratings over operating case temperature range (unless otherwise noted)
Drain-to-source voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V
Source-to-GND voltage (Q1, Q3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 V
Drain-to-GND voltage (Q1, Q3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 V
Drain-to-GND voltage (Q2, Q4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V
Gate-to-source voltage range, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 9 V to 18 V
Continuous drain current, each output, TC = 25°C: DW package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.7 A
NE package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 A
Continuous source-to-drain diode current, TC = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 A
Pulsed drain current, each output, Imax, TC = 25°C (see Note 1 and Figure 15) . . . . . . . . . . . . . . . . . . . . 10 A
Continuous gate-to-source zener-diode current, TC = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 50 mA
Pulsed gate-to-source zener-diode current, TC = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 500 mA
Single-pulse avalanche energy, EAS, TC = 25°C (see Figures 4, 15, and 16) . . . . . . . . . . . . . . . . . . . . . . 21 mJ
Continuous total dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Dissipation Rating Table
Operating virtual junction temperature range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 40°C to 150°C
Operating case temperature range, TC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 40°C to 125°C
Storage temperature range, . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 65°C to 150°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: Pulse duration = 10 ms, duty cycle = 2%
PACKAGE
DW
NE
DISSIPATION RATING TABLE
TC 25°C
POWER RATING
1389 mW
2075 mW
DERATING FACTOR
ABOVE TC = 25°C
11.1 mW/°C
16.6 mW/°C
TC = 125°C
POWER RATING
279 mW
415 mW
2 POST OFFICE BOX 655303 DALLAS, TEXAS 75265





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