DMOS array. TPIC5403 Datasheet

TPIC5403 array. Datasheet pdf. Equivalent

Part TPIC5403
Description power DMOS array
Feature TPIC5403 4-CHANNEL INDEPENDENT GATE-PROTECTED POWER DMOS ARRAY SLIS038A – SEPTEMBER 1994 – REVISED S.
Manufacture etcTI
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TPIC5403
TPIC5403
4-CHANNEL INDEPENDENT GATE-PROTECTED
POWER DMOS ARRAY
SLIS038A – SEPTEMBER 1994 – REVISED SEPTEMBER 1995
Low rDS(on) . . . 0.23 Typ
High Voltage Output . . . 60 V
Extended ESD Capability . . . 4000 V
Pulsed Current . . . 11.25 A Per Channel
Fast Commutation Speed
description
The TPIC5403 is a monolithic gate-protected
power DMOS array that consists of four
independent electrically isolated N-channel
enhancement-mode DMOS transistors. Each
transistor features integrated high-current zener
diodes (ZCXa and ZCXb) to prevent gate damage
in the event that an overstress condition occurs.
These zener diodes also provide up to 4000 V of
ESD protection when tested using the
human-body model of a 100-pF capacitor in series
with a 1.5-kresistor.
DW PACKAGE
(TOP VIEW)
DRAIN1
DRAIN1
GATE1
GND
SOURCE1
SOURCE1
SOURCE2
SOURCE2
GND
GATE2
DRAIN2
DRAIN2
1
2
3
4
5
6
7
8
9
10
11
12
24 DRAIN3
23 DRAIN3
22 GATE3
21 GND
20 SOURCE3
19 SOURCE3
18 SOURCE4
17 SOURCE4
16 GND
15 GATE4
14 DRAIN4
13 DRAIN4
The TPIC5403 is offered in a 24-pin wide-body surface-mount (DW) package and is characterized for operation
over the case temperature range of – 40°C to 125°C.
schematic
1, 2
DRAIN1
GATE1 3
ZC1b
5, 6 ZC1a
SOURCE1
DRAIN2 11, 12
Q1
D1 D3
Z1 Z3
Q3
ZC3b
ZC3a
10
GATE2
Q2
ZC2b
Z2 D2
D4 Z4
7, 8
SOURCE2
ZC2a
4, 9, 16, 21
GND
NOTE A: For correct operation, no terminal may be taken below GND.
Q4
ZC4b
ZC4a
23, 24
DRAIN3
22
GATE3
19, 20
SOURCE3
13, 14
DRAIN4
15
GATE4
17, 18
SOURCE4
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
Copyright © 1995, Texas Instruments Incorporated
1



TPIC5403
TPIC5403
4-CHANNEL INDEPENDENT GATE-PROTECTED
POWER DMOS ARRAY
SLIS038A – SEPTEMBER 1994 – REVISED SEPTEMBER 1995
absolute maximum ratings over operating case temperature range (unless otherwise noted)
Drain-to-source voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V
Source-to-GND voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 V
Drain-to-GND voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 V
Gate-to-source voltage range, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 9 V to 18 V
Continuous drain current, each output, TC = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.25 A
Continuous source-to-drain diode current, TC = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.25 A
Pulsed drain current, each output, Imax, TC = 25°C (see Note 1 and Figure 15) . . . . . . . . . . . . . . . . . 11.25 A
Continuous gate-to-source zener diode current, TC = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 50 mA
Pulsed gate-to-source zener diode current, TC = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 500 mA
Single-pulse avalanche energy, EAS, TC = 25°C (see Figures 4, 15, and 16) . . . . . . . . . . . . . . . . . . . 17.2 mJ
Continuous total power dissipation, TC = 25°C (see Figure 15) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.39 W
Operating virtual junction temperature range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 40°C to 150°C
Operating case temperature range, TC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 40°C to 125°C
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 65°C to 150°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: Pulse duration = 10 ms, duty cycle = 2%
2 POST OFFICE BOX 655303 DALLAS, TEXAS 75265





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