DMOS ARRAY. TPIC5404 Datasheet

TPIC5404 ARRAY. Datasheet pdf. Equivalent

Part TPIC5404
Description H-BRIDGE POWER DMOS ARRAY
Feature ą • Low rDS(on) . . . 0.3 Ω Typ • High-Voltage Output . . . 60 V • Pulsed Current . . . 10 A Per Cha.
Manufacture etcTI
Total Page 15 Pages
Datasheet
Download TPIC5404 Datasheet



TPIC5404
ą
Low rDS(on) . . . 0.3 Typ
High-Voltage Output . . . 60 V
Pulsed Current . . . 10 A Per Channel
Fast Commutation Speed
description
The TPIC5404 is a monolithic power DMOS array
that consists of four electrically isolated N-channel
enhancement-mode DMOS transistors, two of
which are configured with a common source.
The TPIC5404 is offered in a 16-pin thermally
enhanced dual-in-line (NE) package and a 20-pin
wide-body surface-mount (DW) package. The
TPIC5404 is characterized for operation over the
case temperature range of − 40°C to 125°C.
schematic
DRAIN1 14
Q1
GATE1 13
SOURCE1 15
16
DRAIN2
Q2
GATE2 19
Z1
Z2
D1 D2
TPIC5404
HĆBRIDGE POWER DMOS ARRAY
ą
SLIS023B − MARCH 1994 − REVISED SEPTEMBER 1995
DW PACKAGE
(TOP VIEW)
GND
SOURCE4 /GND
GATE4
NC
DRAIN4
SOURCE3
DRAIN3
GATE3
NC
NC
1
2
3
4
5
6
7
8
9
10
20 SOURCE2 /GND
19 GATE2
18 NC
17 NC
16 DRAIN2
15 SOURCE1
14 DRAIN1
13 GATE1
12 NC
11 NC
NE PACKAGE
(TOP VIEW)
DRAIN2
SOURCE2 /GND
GATE2
GND
GND
GATE4
SOURCE4 /GND
DRAIN4
1
2
3
4
5
6
7
8
16 SOURCE1
15 DRAIN1
14 GATE1
13 GND
12 GND
11 GATE3
10 DRAIN3
9 SOURCE3
NC − No internal connection
7 DRAIN3
Q3
Z3 8 GATE3
6
SOURCE3
5
DRAIN4
Q4
3 GATE4
Z4
1
GND
NOTE A: Pin numbers shown are for the DW package.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright 1995, Texas Instruments Incorporated
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
POST OFFICE BOX 1443 HOUSTON, TEXAS 77251−1443
2−1



TPIC5404
TPIC5404
HĆBRIDGE POWER DMOS ARRAY
ą
SLIS023B − MARCH 1994 − REVISED SEPTEMBER 1995
ą
absolute maximum ratings over operating case temperature range (unless otherwise noted)
Drain-to-source voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V
Source-to-GND voltage (Q1, Q3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 V
Drain-to-GND voltage (Q1, Q3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 V
Drain-to-GND voltage (Q2, Q4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V
Gate-to-source voltage range, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 20
Continuous drain current, each output, TC = 25°C: DW package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.7 A
NE package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 A
Continuous source-to-drain diode current (NE package) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 A
Pulsed drain current, each output, TC = 25°C (see Note 1 and Figure 15) . . . . . . . . . . . . . . . . . . . . . . . . 10 A
Single-pulse avalanche energy, TC = 25°C (see Figures 4 and 16) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 mJ
Continuous total power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Dissipation Rating Table
Operating virtual junction temperature range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40°C to 150°C
Operating case temperature range, TC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40°C to 125°C
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65°C to 150°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: Pulse duration = 10 ms, duty cycle = 2%
PACKAGE
DW
NE
DISSIPATION RATING TABLE
TC 25°C
POWER RATING
1389 mW
2075 mW
DERATING FACTOR
ABOVE TC = 25°C
11.1 mW/°C
16.6 mW/°C
TC = 125°C
POWER RATING
279 mW
415 mW
2−2
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
POST OFFICE BOX 1443 HOUSTON, TEXAS 77251−1443





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