DMOS ARRAY. TPIC5424L Datasheet

TPIC5424L ARRAY. Datasheet pdf. Equivalent

Part TPIC5424L
Description H-BRIDGE LOGIC-LEVEL POWER DMOS ARRAY
Feature ą TPIC5424L HĆBRIDGE LOGICĆLEVEL POWER DMOS ARRAY ą SLIS026A − JUNE 1994 − REVISED NOVEMBER 1994 • .
Manufacture etcTI
Total Page 15 Pages
Datasheet
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TPIC5424L
ą TPIC5424L
HĆBRIDGE LOGICĆLEVEL POWER DMOS ARRAY
ą
SLIS026A − JUNE 1994 − REVISED NOVEMBER 1994
Low rDS(on) . . . 0.4 Typ
High-Voltage Output . . . 60 V
Pulsed Current . . . 3 A Per Channel
Fast Commutation Speed
Direct Logic-Level Interface
description
The TPIC5424L is a monolithic logic-level power
DMOS array that consists of four electrically
isolated N-channel enhancement-mode DMOS
transistors, two of which are configured with a
common source.
DW PACKAGE
(TOP VIEW)
GND
SOURCE4/GND
GATE4
NC
DRAIN4
SOURCE3
DRAIN3
GATE3
NC
NC
1
2
3
4
5
6
7
8
9
10
20 SOURCE2/GND
19 GATE2
18 NC
17 NC
16 DRAIN2
15 SOURCE1
14 DRAIN1
13 GATE1
12 NC
11 NC
The TPIC5424L is offered in a 16-pin thermally
enhanced dual-in-line (NE) package and a 20-pin
wide-body surface-mount (DW) package. The
TPIC5424L is characterized for operation over the
case temperature range of − 40°C to 125°C.
NC − No internal connection
NE PACKAGE
(TOP VIEW)
DRAIN2
SOURCE2/GND
GATE2
GND
GND
GATE4
SOURCE4/GND
DRAIN4
1
2
3
4
5
6
7
8
16 SOURCE1
15 DRAIN1
14 GATE1
13 GND
12 GND
11 GATE3
10 DRAIN3
9 SOURCE3
schematic
DRAIN1
GATE1
Q1
Z1 D1 D2
DRAIN3
Q3
Z3
GATE3
SOURCE1
DRAIN2
GATE2
Q2
Z2
SOURCE3
DRAIN4
Q4
Z4 GATE4
GND, SOURCE2, SOURCE4
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright 1994, Texas Instruments Incorporated
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
POST OFFICE BOX 1443 HOUSTON, TEXAS 77251−1443
1



TPIC5424L
TPIC5424L
HĆBRIDGE LOGICĆLEVEL POWER DMOS ARRAY
ą
SLIS026A − JUNE 1994 − REVISED NOVEMBER 1994
ą
absolute maximum ratings over operating case temperature range (unless otherwise noted)
Drain-to-source voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V
Source-to-GND voltage (Q1, Q3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 V
Drain-to-GND voltage (Q1, Q3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 V
Drain-to-GND voltage (Q2, Q4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V
Gate-to-source voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 20 V
Continuous drain current, each output, TC = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 A
Continuous source-to-drain diode current, TC = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 A
Pulsed drain current, each output, Imax, TC = 25°C (see Note 1 and Figure 15) . . . . . . . . . . . . . . . . . . . . . 3 A
Single-pulse avalanche energy, EAS, TC = 25°C (see Figure 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180 mJ
Continuous total dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Dissipation Rating Table
Operating virtual junction temperature range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40°C to 150°C
Operating case temperature range, TC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40°C to 125°C
Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65°C to 150°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: Pulse duration = 10 ms and duty cycle = 2%.
PACKAGE
DW
NE
DISSIPATION RATING TABLE
TC 25°C
POWER RATING
1389 mW
2075 mW
DERATING FACTOR
ABOVE TC = 25°C
11.1 mW/°C
16.6 mW/°C
TC = 125°C
POWER RATING
279 mW
415 mW
2 POST OFFICE BOX 655303 DALLAS, TEXAS 75265
POST OFFICE BOX 1443 HOUSTON, TEXAS 77251−1443





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