IGBT Module. 2MBI1400VXB-170P-50 Datasheet

2MBI1400VXB-170P-50 Module. Datasheet pdf. Equivalent

Part 2MBI1400VXB-170P-50
Description IGBT Module
Feature http://www.fujielectric.com/products/semiconductor/ 2MBI1400VXB-170P-50 IGBT Modules IGBT MODULE .
Manufacture Fuji Electric
Total Page 7 Pages
Datasheet
Download 2MBI1400VXB-170P-50 Datasheet



2MBI1400VXB-170P-50
http://www.fujielectric.com/products/semiconductor/
2MBI1400VXB-170P-50
IGBT Modules
IGBT MODULE (V series)
1700V / 1400A / 2 in one package
Features
High speed switching
Voltage drive
Low Inductance module structure
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Items
Collector-Emitter voltage
Gate-Emitter voltage
Symbols
VCES
VGES
Conditions
Ic Continuous
Collector current
Ic pulse
-Ic
-Ic pulse
Collector power dissipation
Pc
Junction temperature
Tj
Operating junction temperature (under switching conditions) Tjop
Case temperature
TC
Storage temperature
Tstg
Isolation voltage
between terminal and copper base (*1)
between thermistor and others (*2)
Viso
Mounting
Screw torque (*3) Main Terminals
-
Sense Terminals
1ms
1ms
1 device
AC : 1min.
M5
M8
M4
Tc=25°C
Tc=100°C
Maximum ratings
1700
±20
1800
1400
2800
1400
2800
8820
175
150
150
-40 ~ +150
4000
6.0
10.0
2.1
Units
V
V
A
W
°C
VAC
Nm
Note *1: All terminals should be connected together during the test.
Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.
Note *3: Recommendable Value : Mounting
3.0 ~   6.0 Nm (M5) Recommendable Value : Main Terminals 8.0 ~ 10.0 Nm (M8)
Recommendable Value : Sense Terminals  1.8 ~ 2.1 Nm (M4)
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Internal gate resistance
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Resistance
B value
Symbols
ICES
IGES
VGE (th)
VCE (sat)
(terminal)
(*4)
VCE (sat)
(chip)
Rg(int)
Cies
ton
tr
tr (i)
toff
tf
VF
(terminal)
(*4)
VF
(chip)
trr
R
B
Conditions
VGE = 0V, VCE = 1700V
VCE = 0V, VGE = ±20V
VCE = 20V, IC = 1400mA
Tj=25°C
Tj=125°C
VGE = 15V
Tj=150°C
IC = 1400A
Tj=25°C
Tj=125°C
Tj=150°C
-
VCE = 10V, VGE = 0V, f = 1MHz
VCC=900V, Ic=1400A
VGE=±15V, RG=+0.47/-0.68Ω,
Ls=40nH
VGE=0V
IF=1400A
IF = 1400A
T=25°C
T=100°C
T=25/50°C
Tj=25°C
Tj=125°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=150°C
Characteristics
min. typ. max.
- - 12.0
- - 2400
6.0 6.5 7.0
- 2.10 2.55
- 2.45 -
- 2.55 -
- 1.90 2.35
- 2.25 -
- 2.35 -
- 2.25 -
- 113 -
- 1350 -
- 300 -
- 150 -
- 1800 -
- 200 -
- 2.00 2.45
- 2.25 -
- 2.20 -
- 1.80 2.25
- 2.05 -
- 2.00 -
- 250 -
- 5000 -
465 495 520
3305 3375 3450
Units
mA
nA
V
V
Ω
nF
nsec
V
nsec
K
Note *4: Please refer to Page 6, there is definition of on-state voltage at terminal .
Thermal resistance characteristics
Items
Thermal resistance (1device)
Contact thermal resistance (1device) (*5)
Symbols
Rth(j-c)
Rth(c-f)
Conditions
Inverter IGBT
Inverter FWD
with Thermal Compound
Characteristics
min. typ. max.
- - 0.017
- - 0.032
- 0.0042 -
Units
°C/W
Note *5: This is the value which is defined mounting on the additional cooling fin with thermal compound.
1 7963a
JUNE 2015



2MBI1400VXB-170P-50
2MBI1400VXB-170P-50
Characteristics (Representative)
[INVERTER]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
3000
Vge=20V
15V
2500
2000
12V
1500
1000
10V
500
0
0
8V
1234
Collector-Emitter voltage: Vce [V]
5
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
[INVERTER]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 150°C / chip
3000
2500
Vge= 20V
15V
2000
12V
1500
1000
10V
500 8V
0
012345
Collector-Emitter voltage: Vce [V]
[INVERTER]
Collector current vs. Collector-Emitter voltage (typ.)
Vge= 15V / chip
3000
2500
Tj=25°C 125°C
150°C
2000
1500
1000
500
0
012345
Collector-Emitter Voltage: Vce [V]
[INVERTER]
Gate Capacitance vs. Collector-Emitter Voltage (typ.)
Vge= 0V, ƒ= 1MHz, Tj= 25°C
1000
Cies
100
10 Cres
Coes
1
0 5 10 15 20 25 30
Collector-Emitter voltage: Vce [V]
[INVERTER]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj= 25°C / chip
10
8
6
4
Ic=2800A
2 Ic=1400A
Ic=700A
0
5 10 15 20 25
Gate-Emitter Voltage: Vge [V]
[INVERTER]
Dynamic Gate Charge (typ.)
Vcc=900V, Ic=1400A, Tj= 25°C
20
15 Vce
10
5
0
Vge
-5
-10
-15
-20
-15000
-5000
5000
1250
1000
750
500
250
0
-250
-500
-750
-1000
15000
Gate charge: Qg [nC]
2





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