IGBT Module. 2MBI75VA-170-50 Datasheet

2MBI75VA-170-50 Module. Datasheet pdf. Equivalent

Part 2MBI75VA-170-50
Description IGBT Module
Feature http://www.fujielectric.com/products/semiconductor/ 2MBI75VA-170-50 IGBT Modules IGBT MODULE (V s.
Manufacture Fuji Electric
Total Page 6 Pages
Datasheet
Download 2MBI75VA-170-50 Datasheet



2MBI75VA-170-50
http://www.fujielectric.com/products/semiconductor/
2MBI75VA-170-50
IGBT Modules
IGBT MODULE (V series)
1700V / 75A / 2 in one package
Features
High speed switching
Voltage drive
Low Inductance module structure
Package No. : M263
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at TC=25°C unless otherwise specified)
Items
Collector-Emitter voltage
Gate-Emitter voltage
Symbols
VCES
VGES
Conditions
IC Continuous
Collector current
IC pulse
-IC
-IC pulse
Collector power dissipation
PC
Junction temperature
Tj
Operating junction temperature (under switching conditions) Tjop
Case temperature
TC
Storage temperature
Tstg
Isolation voltage between terminal and copper base (*1) Viso
Screw torque
Mounting (*2)
Terminals (*3)
-
-
1ms
1ms
1 device
AC : 1min.
Note *1: All terminals should be connected together when isolation test will be done.
Note *2: Recommendable Value : 3.0~5.0 N·m (M5 or M6)
Note *3: Recommendable Value : 2.5~5.0 N·m (M5)
Electrical characteristics (at Tj= 25°C unless otherwise specified)
TC=25°C
TC=100°C
Items
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Internal gate resistance
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Symbols
ICES
IGES
VGE (th)
VCE (sat)
(terminal)
VCE (sat)
(chip)
RG (int)
Cies
ton
tr
tr (i)
toff
tf
VF
(terminal)
VF
(chip)
trr
Conditions
VGE = 0V, VCE = 1700V
VCE = 0V, VGE = ±20V
VCE = 20V, IC = 75mA
Tj=25°C
Tj=125°C
VGE = 15V
Tj=150°C
IC = 75A
Tj=25°C
Tj=125°C
Tj=150°C
-
VCE = 10V, VGE = 0V, f = 1MHz
VCC = 900V, IC = 75A
VGE = ±15V, Rg_on=Rg_off= 22Ω
Tj=150°C, LS = 30nH
VGE = 0V
IF = 75A
IF = 75A
Tj=25°C
Tj=125°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=150°C
Maximum ratings
1700
±20
75
110
150
75
150
555
175
150
125
-40 ~ 125
4000
5.0
5.0
Units
V
V
A
W
°C
VAC
Nm
Characteristics
min. typ. max.
- - 1.0
- - 200
6.0 6.5 7.0
- 2.10 2.55
- 2.55 -
- 2.60 -
- 2.00 2.45
- 2.40 -
- 2.45 -
- 10 -
- 8.2 -
- 1250 -
- 550 -
- 70 -
- 1300 -
- 150 -
- 1.85 2.30
- 2.10 -
- 2.10 -
- 1.80 2.25
- 2.05 -
- 2.05 -
- 140 -
Units
mA
nA
V
V
Ω
nF
nsec
V
nsec
Thermal resistance characteristics
Items
Symbols Conditions
Thermal resistance(1device)
Contact thermal resistance (1device) (*4)
Rth(j-c)
Rth(c-f)
IGBT
FWD
with Thermal Compound
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.
Characteristics
min. typ. max.
- - 0.27
- - 0.50
- 0.050 -
Units
°C/W
1 7932b
May 2012



2MBI75VA-170-50
2MBI75VA-170-50
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
180
160 VGE=20V 15V 12V
140
120
100
80 10V
60
40
20 8V
0
012345
Collector-Emitter voltage: VCE [V]
Collector current vs. Collector-Emitter voltage (typ.)
VGE= 15V / chip
180
160 Tj=25°C 125°C
140
120
100 150°C
80
60
40
20
0
0123
Collector-Emitter Voltage: VCE [V]
4
Gate Capacitance vs. Collector-Emitter Voltage
VGE= 0V, ƒ= 1MHz, Tj= 25°C
100
10 Cies
1 Cres
0.1
0
Coes
10 20
Collector-Emitter voltage: VCE [V]
30
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 150°C / chip
180
160 VGE= 20V 15V
140 12V
120
100
80 10V
60
40
8V
20
0
012345
Collector-Emitter voltage: VCE [V]
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 25°C / chip
8
6
4
Ic=150A
2 Ic=75A
Ic=37.5A
0
5 10 15 20 25
Gate-Emitter Voltage: VGE [V]
Dynamic Gate Charge (typ.)
Vcc=900V, Ic=75A, Tj= 25°C
20
15
VCE
10
5
0
-5
VGE
-10
-15
-20
-1.0 -0.5 0.0 0.5
Gate charge: Qg [μC]
1200
900
600
300
0
-300
-600
-900
-1200
1.0
2





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