IGBT Module. 2MBI1200VG-120P Datasheet

2MBI1200VG-120P Module. Datasheet pdf. Equivalent

Part 2MBI1200VG-120P
Description IGBT Module
Feature http://www.fujielectric.com/products/semiconductor/ 2MBI1200VG-120P IGBT Modules IGBT MODULE (V s.
Manufacture Fuji Electric
Total Page 7 Pages
Datasheet
Download 2MBI1200VG-120P Datasheet



2MBI1200VG-120P
http://www.fujielectric.com/products/semiconductor/
2MBI1200VG-120P
IGBT Modules
IGBT MODULE (V series)
1200V / 1200A / 2 in one package
Features
High speed switching
Voltage drive
Low Inductance module structure
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Items
Collector-Emitter voltage
Gate-Emitter voltage
Symbols
VCES
VGES
Conditions
Ic Continuous
Collector current
Icp
-Ic
-Ic pulse
Collector Power Dissipation
Pc
Junction temperature
Tj
Operating junction temperature(under switching conditions) Tjop
Storage temperature
Tstg
Isolation voltage between terminal and copper base *1 Viso
Mounting
Screw Torque *2
Main Terminals
Sense Terminals
1ms
1ms
1 device
AC : 1min.
M6
M8
M4
Tc=25°C
Tc=100°C
Tc=100°C
Maximum Ratings
1200
±20
1600
1200
2400
1200
2400
6810
175
150
-40 ~ +150
4000
5.75
10
2.5
(*1) All terminals should be connected together when isolation test will be done.
(*2) Recommendable Value :Mounting 4.25~5.75 Nm (M6) , Main Terminals 8~10 Nm (M8) , Sense Terminals 1.7~2.5 Nm (M4)
Units
V
V
A
W
°C
VAC
Nm
1 8108
SEPTEMBER 2013



2MBI1200VG-120P
2MBI1200VG-120P
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Zero gate voltage Collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Symbols
ICES
IGES
VGE (th)
VCE (sat)
(main
terminal)
VCE (sat)
(chip)
Conditions
VGE = 0V VCE = 1200V
VCE = 0V VGE=±20V
VCE = 20V,Ic = 1200mA
VGE = 15V
IC = 1200A
Internal gate resistance
Input capacitance
Turn-on
Turn-off
Forward on voltage
Int Rg
Cies
ton
tr
toff
tf
VF
(main
terminal)
VF
(chip)
-
VCE=10V,VGE=0V,f=1MHz
VCC = 600V
IC = 1200A
Lm = 75nH
VGE = ±15V , Tj = 125°C
Rgon = 2.4 Ω
Rgoff = 0.22 Ω
VGE = 0V
IF = 1200A
Reverse recovery
Lead resistance, terminal-chip
R tn
R lead
IF = 1200A , Tj = 125°C
-
Tj=25°C
Tj=125°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=150°C
Characteristics
min. typ. max.
- - 1.0
- - 1600
6.0 6.5 7.0
- 2.02 2.31
- 2.32 -
- 2.42 -
- 1.70 1.95
- 2.00 -
- 2.10 -
- 1.88 -
- 104 -
- 2.55 -
- 0.82 -
- 1.67 -
- 0.16 -
- 2.02 2.31
- 2.17 -
- 2.12 -
- 1.70 1.95
- 1.85 -
- 1.80 -
- 0.36 -
- 0.268 -
Units
mA
nA
V
V
nF
μs
V
μs
mΩ
Thermal resistance characteristics
Items
Symbols Conditions
Thermal resistance
Contact thermal resistance
Rth(j-c)
Rth(c-f)
IGBT
FWD
with Thermal Compound(*)
*This is the value which is defined mounting on the additional cooling fin with thermal compound.
Characteristics
min. typ. max.
- - 0.0220
- - 0.0360
- 0.0060 -
Units
°C/W
2





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