IGBT Module. 2MBI800VT-170E Datasheet

2MBI800VT-170E Module. Datasheet pdf. Equivalent

Part 2MBI800VT-170E
Description IGBT Module
Feature http://www.fujielectric.com/products/semiconductor/ 2MBI800VT-170E IGBT MODULE (V series) 1700V / .
Manufacture Fuji Electric
Total Page 6 Pages
Datasheet
Download 2MBI800VT-170E Datasheet



2MBI800VT-170E
http://www.fujielectric.com/products/semiconductor/
2MBI800VT-170E
IGBT MODULE (V series)
1700V / 800A / 2 in one package
Features
High speed switching
Voltage drive
Low Inductance module structure
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at TC=25°C unless otherwise specified)
Items
Symbols
Conditions
Collector-Emitter voltage
VCES
Gate-Emitter voltage
VGES
IC Continuous
Collector current
ICP
-IC
-IC pulse
Collector power dissipation
PC
Junction temperature
Tj
Operating junction temperature (under switching conditions) Tjop
Storage temperature
Tstg
Isolation voltage between terminal and copper base (*1) Viso
Mounting
-
Screw torque (*2) Main Terminals
-
Sense Terminals
-
1ms
1ms
1 device
AC : 1min.
M6
M8
M4
TC=25°C
TC=100°C
Note *1: All terminals should be connected together when isolation test will be done.
Note *2: Recommendable Value :
Mounting 4.25~5.75 Nm (M6) , Main Terminals 8~10 Nm (M8) , Sense Terminals 1.7~2.5 Nm (M4)
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Internal gate resistance
Input capacitance
Turn-on
Turn-off
Forward on voltage
Reverse recovery
Lead resistance, terminal-chip
Thermal resistance characteristics
Symbols Conditions
ICES VGE = 0V, VCE = 1700V
IGES VCE = 0V, VGE = ±20V
VGE (th)
VCE = 20V, IC = 800mA
VCE (sat)
(main terminal) VGE = 15V
Tj=25°C
Tj=125°C
Tj=150°C
VCE (sat)
(chip)
IC = 800A
Tj=25°C
Tj=125°C
Tj=150°C
Int RG
Cies VCE = 10V, VGE = 0V, f = 1MHz
ton
VCC = 900V
Rgon = 1.5Ω
tr
IC = 800A
Rgoff = 0.82Ω
toff Lm=75nH
tf VGE = ±15V, Tj=125°C
VF
(main terminal) VGE = 0V
Tj=25°C
Tj=125°C
Tj=150°C
VF
(chip)
IF = 800A
Tj=25°C
Tj=125°C
Tj=150°C
trr IF = 800A, Tj = 125°C
R lead
Items
Symbols Conditions
Thermal resistance(1device)
Contact thermal resistance (1module) (*3)
Rth(j-c)
Rth(c-f)
IGBT
FWD
with Thermal Compound
Note *3: This is the value which is defined mounting on the additional cooling fin with thermal compound.
IGBT Modules
Maximum ratings
1700
±20
1200
800
1600
800
1600
5370
175
150
-40 ~ +125
4000
5.75
10
2.5
Units
V
V
A
W
°C
VAC
Nm
Characteristics
min. typ. max.
- - 1.0
- - 1600
6.0 6.5 7.0
- 2.21 2.49
- 2.61 -
- 2.66 -
- 2.00 2.25
- 2.40 -
- 2.45 -
- 2.19 -
- 79 -
- 2.0 -
- 0.67 -
- 2.13 -
- 0.55 -
- 1.87 2.22
- 2.03 -
- 2.00 -
- 1.66 1.98
- 1.82 -
- 1.79 -
- 0.35 -
- 0.268 -
Units
mA
nA
V
V
nF
µs
V
µs
Characteristics
min. typ. max.
- - 0.0279
- - 0.0375
- 0.0077 -
Units
°C/W
1 8048
FEBRUARY 2013



2MBI800VT-170E
2MBI800VT-170E
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C, chip
1800
1600
VGE=20V 15V
12V
1400
1200
1000
800 10V
600
400
200
0
0.0
8V
1.0 2.0 3.0 4.0
Collector-Emitter voltage: VCE [V]
5.0
Collector current vs. Collector-Emitter voltage (typ.)
VGE= +15V, chip
1800
1600
Tj=25°C Tj=125°C
1400
1200
Tj=150°C
1000
800
600
400
200
0
0.0
1.0 2.0 3.0 4.0
Collector-Emitter Voltage: VCE [V]
5.0
Capacitance vs. Collector-Emitter voltage (typ.)
VGE= 0V, ƒ= 1MHz, Tj= 25°C
1000
100
Cies
10
1
0
Cres
Coes
10 20
Collector-Emitter voltage: VCE [V]
30
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 150°C, chip
1800
1600
VGE=20V 15V
1400
12V
1200
1000
800
10V
600
400
200 8V
0
0.0
1.0 2.0 3.0 4.0
Collector-Emitter voltage: VCE [V]
5.0
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj= 25°C, chip
10
8
6
4
IC=1600A
2 IC=800A
IC=400A
0
5 10 15 20
Gate - Emitter voltage: VGE [V]
25
Dynamic Gate charge (typ.)
Tj= 25°C
25 1000
20 800
15 VCE VGE 600
10 400
5 200
00
-5 -200
-10 -400
-15 -600
-20 -800
-25 -1000
-10 -8 -6 -4 -2 0 2 4 6 8 10
Gate charge: Qg [μC]
2





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