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HMC462LP5E

Analog Devices

GaAs pHEMT MMIC LOW NOISE AMPLIFIER

AMPLIFIERS - LOW NOISE - SMT HMC462LP5 / 462LP5E v05.0213 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 2 - 20 GHz Typical Ap...


Analog Devices

HMC462LP5E

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Description
AMPLIFIERS - LOW NOISE - SMT HMC462LP5 / 462LP5E v05.0213 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 2 - 20 GHz Typical Applications The HMC462LP5 / HMC462LP5E Wideband LNA is ideal for: Telecom Infrastructure Microwave Radio & VSAT Military EW, ECM & C3I Test Instrumentation Fiber Optics Functional Diagram Features Noise Figure: 2.5 dB @ 10 GHz Gain: 13 dB P1dB Output Power: +14.5 dBm @ 10 GHz Self-Biased: +5V @ 66mA 50 Ohm Matched Input/Output 25 mm2 Leadless SMT Package General Description The HMC462LP5 & HMC462LP5E are GaAs MMIC pHEMT Low Noise Distributed Amplifiers in leadless 5x5 mm surface mount packages which operate between 2 and 20 GHz. The self-biased amplifier provides 13 dB of gain, 2.5 to 3.5 dB noise figure and +14.5 dBm of output power at 1 dB gain compression while requiring only 66 mA from a single +5V supply. Gain flatness is excellent from 6 - 18 GHz making the HMC462LP5 & HMC462LP5E ideal for EW, ECM RADAR and test equipment applications. The wideband amplifier I/Os are internally matched to 50 Ohms and are internally DC blocked. Electrical Specifications, TA = +25° C, Vdd= 5V Parameter Frequency Range Gain Gain Flatness Gain Variation Over Temperature Noise Figure Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Supply Current (Idd) (Vdd= 5V) Min. 12 12 41 Typ. 2-6 14 ±0.5 0.015 3.0 15 12 15 17 26 66 Max. 0.025 4.0 84 Min. 11 11 41 Typ. 6 - 14 1...




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