GaAs pHEMT MMIC LOW NOISE AMPLIFIER
AMPLIFIERS - LOW NOISE - SMT
HMC462LP5 / 462LP5E
v05.0213
GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 2 - 20 GHz
Typical Ap...
Description
AMPLIFIERS - LOW NOISE - SMT
HMC462LP5 / 462LP5E
v05.0213
GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 2 - 20 GHz
Typical Applications
The HMC462LP5 / HMC462LP5E Wideband LNA is ideal for: Telecom Infrastructure Microwave Radio & VSAT Military EW, ECM & C3I Test Instrumentation Fiber Optics
Functional Diagram
Features
Noise Figure: 2.5 dB @ 10 GHz
Gain: 13 dB
P1dB Output Power: +14.5 dBm @ 10 GHz
Self-Biased: +5V @ 66mA
50 Ohm Matched Input/Output
25 mm2 Leadless SMT Package
General Description
The HMC462LP5 & HMC462LP5E are GaAs MMIC pHEMT Low Noise Distributed Amplifiers in leadless 5x5 mm surface mount packages which operate between 2 and 20 GHz. The self-biased amplifier provides 13 dB of gain, 2.5 to 3.5 dB noise figure and +14.5 dBm of output power at 1 dB gain compression while requiring only 66 mA from a single +5V supply. Gain flatness is excellent from 6 - 18 GHz making the HMC462LP5 & HMC462LP5E ideal for EW, ECM RADAR and test equipment applications. The wideband amplifier I/Os are internally matched to 50 Ohms and are internally DC blocked.
Electrical Specifications, TA = +25° C, Vdd= 5V
Parameter Frequency Range Gain Gain Flatness Gain Variation Over Temperature Noise Figure Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Supply Current (Idd) (Vdd= 5V)
Min. 12
12 41
Typ. 2-6 14 ±0.5 0.015 3.0 15 12 15 17 26
66
Max. 0.025
4.0
84
Min. 11
11 41
Typ. 6 - 14
1...
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