operational amplifier. TLV4314-Q1 Datasheet

TLV4314-Q1 Datasheet PDF, Equivalent


Part Number

TLV4314-Q1

Description

operational amplifier

Manufacture

etcTI

Total Page 30 Pages
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TLV4314-Q1 Datasheet
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TLV314-Q1, TLV2314-Q1, TLV4314-Q1
SBOS837A – NOVEMBER 2016 – REVISED JANUARY 2019
TLVx314-Q1 3-MHz, low-power, internal EMI filter, RRIO, operational amplifier
1 Features
1 Qualified for Automotive Applications
• AEC-Q100 Qualified With the Following Results:
– Device Temperature Grade 1: –40°C to
+125°C Ambient Operating Temperature
Range
– Device HBM ESD Classification Level 3A
– Device CDM ESD Classification Level C6
• Low Offset Voltage: 0.75 mV (Typical)
• Low Input Bias Current: 1 pA (Typical)
• Wide Supply Range: 1.8 V to 5.5 V
• Rail-to-Rail Input and Output
• Gain Bandwidth: 3 MHz
• Low IQ: 250 µA/Ch (Maximum)
• Low Noise: 16 nV/Hz at 1 kHz
• Internal RF and EMI Filter
• Number of Channels:
– TLV314-Q1: 1
– TLV2314-Q1: 2
– TLV4314-Q1: 4
• Extended Temperature Range:
–40°C to +125°C
2 Applications
• Low-Side Sensing
• Battery Management Systems
• Passive Safety
• Capacitive Sensing
• Fuel Pumps
3 Description
The TLVx314-Q1 family of single-, dual-, and quad-
channel operational amplifiers represents a new
generation of low-power, general-purpose operational
amplifiers. Rail-to-rail input and output swings
(RRIO), low quiescent current (150 μA typically at 5
V) combine with a wide bandwidth of 3 MHz to make
this family very attractive for a variety of battery-
powered applications that require a good balance
between cost and performance. The TLVx314-Q1
family achieves a low-input bias current of 1 pA,
making it an excellent choice for high impedance
sensors.
The robust design of the TLVx314-Q1 devices
provides ease-of-use to the circuit designer: unity-
gain stability, RRIO, capacitive loads of up to 300-pF,
an integrated RF and EMI rejection filter, no phase
reversal in overdrive conditions, and high electrostatic
discharge (ESD) protection (4-kV HBM).
These devices are optimized for low-voltage
operation as low as 1.8 V (±0.9 V) and up to 5.5 V
(±2.75 V), and are specified over the extended
industrial temperature range of –40°C to +125°C.
The TLV314-Q1 (single) is available in both 5-pin
SC70 and SOT-23 packages. The TLV2314-Q1
(dual) is offered in 8-pin SOIC and VSSOP packages.
The quad-channel TLV4314-Q1 is offered in a 14-pin
TSSOP package.
Device Information(1)
PART NUMBER
PACKAGE
BODY SIZE (NOM)
TLV314-Q1
SOT-23 (5)
SC70 (5)
2.90 mm × 1.60 mm
2.00 mm × 1.25 mm
TLV2314-Q1
SOIC (8)
4.90 mm × 3.91 mm
TLV4314-Q1
TSSOP (14)
5.00 mm × 4.40 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
120
110
100
90
80
70
60
50
40
30
20
10
0
10M
EMIRR vs Frequency
100M
1G
Frequency (Hz)
10G
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.

TLV4314-Q1 Datasheet
TLV314-Q1, TLV2314-Q1, TLV4314-Q1
SBOS837A – NOVEMBER 2016 – REVISED JANUARY 2019
www.ti.com
Table of Contents
1 Features .................................................................. 1
2 Applications ........................................................... 1
3 Description ............................................................. 1
4 Revision History..................................................... 2
5 Pin Configuration and Functions ......................... 3
6 Specifications......................................................... 6
6.1 Absolute Maximum Ratings ...................................... 6
6.2 ESD Ratings ............................................................ 6
6.3 Recommended Operating Conditions....................... 6
6.4 Thermal Information: TLV314-Q1 ............................. 7
6.5 Thermal Information: TLV2314-Q1 ........................... 7
6.6 Thermal Information: TLV4314-Q1 ........................... 7
6.7 Electrical Characteristics........................................... 8
6.8 Typical Characteristics .............................................. 9
6.9 Typical Characteristics ............................................ 10
7 Detailed Description ............................................ 13
7.1 Overview ................................................................. 13
7.2 Functional Block Diagram ....................................... 13
7.3 Feature Description................................................. 14
7.4 Device Functional Modes........................................ 15
8 Application and Implementation ........................ 16
8.1 Application Information............................................ 16
8.2 Typical Application ................................................. 16
8.3 System Examples ................................................... 17
9 Power Supply Recommendations...................... 19
9.1 Input and ESD Protection ....................................... 19
10 Layout................................................................... 20
10.1 Layout Guidelines ................................................. 20
10.2 Layout Example .................................................... 20
11 Device and Documentation Support ................. 21
11.1 Device Support...................................................... 21
11.2 Documentation Support ........................................ 21
11.3 Related Links ........................................................ 21
11.4 Community Resources.......................................... 21
11.5 Trademarks ........................................................... 21
11.6 Electrostatic Discharge Caution ............................ 21
11.7 Glossary ................................................................ 21
12 Mechanical, Packaging, and Orderable
Information ........................................................... 22
4 Revision History
Changes from Original (November 2016) to Revision A
Page
• Deleted TLV2314-Q1 Preview notation in Device Information .............................................................................................. 1
• Deleted VSSOP (8) package from Device Information ......................................................................................................... 1
• Deleted VSSOP package information and preview notation for 8-Pin SOIC in Pin Functions............................................... 4
• Deleted DGK (VSSOP) thermal information .......................................................................................................................... 7
2 Submit Documentation Feedback
Copyright © 2016–2019, Texas Instruments Incorporated
Product Folder Links: TLV314-Q1 TLV2314-Q1 TLV4314-Q1


Features Datasheet pdf Product Folder Order Now Technical Doc uments Tools & Software Support & Com munity TLV314-Q1, TLV2314-Q1, TLV4314- Q1 SBOS837A – NOVEMBER 2016 – REVIS ED JANUARY 2019 TLVx314-Q1 3-MHz, low-p ower, internal EMI filter, RRIO, operat ional amplifier 1 Features •1 Qualif ied for Automotive Applications • AEC -Q100 Qualified With the Following Resu lts: – Device Temperature Grade 1: 40°C to +125°C Ambient Operating Tem perature Range – Device HBM ESD Class ification Level 3A – Device CDM ESD C lassification Level C6 • Low Offset V oltage: 0.75 mV (Typical) • Low Input Bias Current: 1 pA (Typical) • Wide Supply Range: 1.8 V to 5.5 V • Rail-t o-Rail Input and Output • Gain Bandwi dth: 3 MHz • Low IQ: 250 µA/Ch (Maxi mum) • Low Noise: 16 nV/√Hz at 1 kH z • Internal RF and EMI Filter • Nu mber of Channels: – TLV314-Q1: 1 – TLV2314-Q1: 2 – TLV4314-Q1: 4 • Ext ended Temperature Range: –40°C to +1 25°C 2 Applications • Low-Side Sensing • Battery Management Systems • Passive Safety • Capacitive Sensing • Fuel .
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