VCR11N

..z ~ voltage-controlled ~ resistor FETs designed for Small Signal Attenuators Filters Amplifier Gain Control Oscillator Amplitude Control H Silicanix ABSOLUTE MAXIMUM RATING (25°C) Gate-Drain or Gate-Source Voltage ....... _......... 25 V Gate Current ................................ 10 mA Total Device Dissipation at TA = 25°C (Derate at 2.0 mW/oC to 175°C) .............. 300 mW Storage Temperature Range .............. -55 to +175°C TO-71 See Section 6 ~~G, G2 S1 S2 S2 ° D2 ' °G, 0 32 6,0 G2 D, °s,2, Bottom View 0' ,A ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted) Characteristic 1 IGSS Gate Reverse Current 2 BVGSS Gate-Source Breakdown Voltage 3 VGS(off) Gate-Source Cutoff Voltage 4 rds(on) Drain Source ON Resistance 5 Cdgo Drain-Gate Capacitance 6 Csgo Source-Gate Capacitance 7 rosml% rOsmax Note 1 VGS1 + Control Voltage necessary to force rOS. to 200n or 21<0 VCR11N Min Max -0 2 -25 -B -12 100 200 B B 95 1 95 1 Unit Test Conditions nA VGS=-15V,VDS=0 IG = -lilA, VDS = 0 V ID= lilA, VDS= 10V n VGS= O,ID = 0 f = 1 kHz VGD=-10V,IS=0 pF VGS= -10V,ID= 0 f = 1 MHz VOS= 100mV rOSl - 200l! VGSl =VGS2 r[>SI = 2kl! NSH* 'Contact factory for geometry information. 3-134 Siliconix ...