2N5565

matched dual n-channel JFETs designed for H Siliccnix Performance Curves NCB See Section 4 Wideband Differential Amplifiers Commutators BENEFITS High Gain 7500 ~mho Minimum 9fs Specified Matching Characteristics *ABSOLUTE MAXIMUM RATINGS (25°C) Gate-Gate Voltage .......................... ±80V Gate·Drain or Gate·Source Voltage .............. -40 V Gate Current ............................... 50mA Device Dissipation (Each Side), T A = 25°C (Derate 2.2 mW;oC) ....................... 325mW Total Device Dissipation, T A = 25°C (Derate 3.3 mW;oC) ...................... 650mW Storage Temperature Range .............. -65 to +200°C Lead Temperature (1/16" from case for 10 seconds) ...............300°C TO·71 See Section 6 ~~G, G2 8, 52 82 G, 30 o·o. 02 20 0 7 G2 0, ,0 8, Bottom View Gt "Ii G2 *ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted) 1 2" 3" S T 4" A 5" T I "6 C "7" IGSS BVGSS VGS(off) VGS(f) lOSS rOS(on) 8 9f. 9" 0 y 90. iT~i'ON Crss CISS 121 NF =C 13 en Characteristic Gate-Reverse Current Gate-5ource Breakdown Voltage Gate-Source Cutoff Voltage Gate-Source Voltage Saturation Drain Current (Note 1) Static Dram Source ON Resistance Common-Source Forward Transconductance (Note 1) Common-Source Output Conductance Common-Source Reverse Transfer CapaCitance Common-Source Input Capacitance Spot NOise Figure Equivalent Short CircUit Input NOIse Voltage Min -40 -05 5 7500 7000 Characteristics 14 -M 15 TA -C H 16 I N G 1- 17 10SSl I...