2N5639

n-channel JFETs designed for H Siliconix Performance Curves NCB/NZB See Sedion 4 Analog Switches Commutators Choppers *~ABSOLUTE MAXIMUM RATINGS (25°C) Drain-Source Breakdown Voltage ................ 30V Drain-Gate Breakdown Voltage ................. 30V Source-Gate Breakdown Voltage ................. 30V Forward Gate Current ........................ 10mA .Total Device Dissipation Derate above 25°e .a.t.T.L.E..A.D..=.2..5.°e....... ... 625mW 5.68 mWre Operating Junction Temperature Range ..... -65 to +135°e Storage Temperature Range .............. -65 to +150°C Lead Temperature (1/16" from case for 10 seconds) ............... 3000 e BENEFITS Low Cost Industry Standard Package Automatic Insertion Package Fast Switching trise < 5 ns (2N5638) Low Insertion Loss rDS(on} < 30 n (2N5638) Short Sample and Hold Aperture Time Crss <4 pF Plastic TO-92 See Section 6 o~: GDs c oc Bottom View G s 0 i*ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted) Characteristic 2N5638 2N5639 2N5640 Unit Min Max Min Max Min Max Test Conditions -1 2. s 3T BVGSS IGSS Gate-Source Breakdown Voltage Gate Reverse Current -30 -30 -1.0 -1.0 -1.0 -1.0 4A ST "6 1 -C 10(011) lOSS Dram Cutoff Current Saturation Dram Current 1.0 1.0 10 1.0 50 25 - 7 VOSlon) Drain-Source ON Voltage .- 8 Static Oram-5ource ON rOSlon) Resistance 0.5 30 0.5 60 9 1- 0 10 y I- N 11 rdslon) CIIS Crss Orain-5ource ON Resistance Common-Source Input Capacitance Common-Sourc...