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2N5640 Dataheets PDF



Part Number 2N5640
Manufacturers Siliconix
Logo Siliconix
Description n-channel JFET
Datasheet 2N5640 Datasheet2N5640 Datasheet (PDF)

n-channel JFETs designed for • • • H Siliconix Performance Curves NCB/NZB See Sedion 4 • Analog Switches • Commutators • Choppers *~ABSOLUTE MAXIMUM RATINGS (25°C) Drain-Source Breakdown Voltage . 30V Drain-Gate Breakdown Voltage .. 30V Source-Gate Breakdown Voltage .. 30V Forward Gate Current .... 10mA .Total Device Dissipation Derate above 25°e .a.t.T.L.E..A.D..=.2..5.°e.. ... 625mW 5.68 mWre Operating Junction Tem.

  2N5640   2N5640


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n-channel JFETs designed for • • • H Siliconix Performance Curves NCB/NZB See Sedion 4 • Analog Switches • Commutators • Choppers *~ABSOLUTE MAXIMUM RATINGS (25°C) Drain-Source Breakdown Voltage ................ 30V Drain-Gate Breakdown Voltage ................. 30V Source-Gate Breakdown Voltage ................. 30V Forward Gate Current ........................ 10mA .Total Device Dissipation Derate above 25°e .a.t.T.L.E..A.D..=.2..5.°e....... ... 625mW 5.68 mWre Operating Junction Temperature Range ..... -65 to +135°e Storage Temperature Range .............. -65 to +150°C Lead Temperature (1/16" from case for 10 seconds) ............... 3000 e BENEFITS • Low Cost • Industry Standard Package • Automatic Insertion Package • Fast Switching trise < 5 ns (2N5638) • Low Insertion Loss rDS(on} < 30 n (2N5638) • Short Sample and Hold Aperture Time Crss <4 pF Plastic TO-92 See Section 6 o~: GDs c oc Bottom View G s 0 i*ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted) Characteristic 2N5638 2N5639 2N5640 Unit Min Max Min Max Min Max Test Conditions -1 2. s 3T BVGSS IGSS Gate-Source Breakdown Voltage Gate Reverse Current -30 -30 -1.0 -1.0 -1.0 -1.0 4A ST "6 1 -C 10(011) lOSS Dram Cutoff Current Saturation Dram Current 1.0 1.0 10 1.0 50 25 - 7 VOSlon) Drain-Source ON Voltage .- 8 Static Oram-5ource ON rOSlon) Resistance 0.5 30 0.5 60 9 1- 0 10 y I- N 11 rdslon) CIIS Crss Orain-5ource ON Resistance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance 30 60 10 10 4.0 4.0 -30 V IG=-101JA.VOS=0 -1.0 nA VGS=-15V.VOS=0 -1.0 IJA TA = +10o"C 1.0 nA VOS = 15 V. VGS = -12 V 12N5638) =1.0 Ill\, "GS -8 V (2F\J5539}, '-'GS - -6'1 (21'J564C) TA=I~COC 5.0 mA VOS = 20 V, VGS = 0 INote 1) 0.5 V VGS = 0,10 = 12 mA 12NS63B), 10 = 6 rnA 12N5639), 10 = 3 rnA 12N5640) n100 10 = 1 mA, VGS = 0 100 VGS=O,IO=O 1=1 kHz 10 pF 4.0 VGS = -12 V, VOS = 0 1= 1 MHz -, 12 1,ll S 14 W 115 Idlon) tr tdlo!!) tl Turn-On Oelay Time Rise Time Turn-OFF Delay Time Fall Time 4.0 6.0 5.0 8.0 5.0 10 10 20 n8.0 VOO=10V 1010nl=12 mA 12N563BIRL = BOO 12N563BI n10 nsec VGSlon)= 0 'Olon)= 6,mA 12NS6391 RL = 1.6k 12N56391 n15 VGSloff)= -10 V '010nl=3 mA 12N5640) RL =3.2k 12N56401 30 . JEOEC regIStered data NOTE: 1 Pulse test PW .;; 300 f.JSec, duty cycle';; 3.0% RL - VOD -lrDS(on! +501 '0 ~~~~:!k..t= VGS(on! ~9" -----vGsc••, ~~:~TB~J --i 110%-'~.-1.1.::: "t"r,,' voo IcPU~C o1J'F GENERATOR ;_ __ 10Kn{ ~ ,~OO1"FI ~ NCB/NZB TO 50 OHM SCOPE B TO 50 OHM SCOPE A SCOPE TEKTRONIX 561A OR EQUIVALENT 3-30 Siliconix .


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