Document
n-channel JFETs
designed for • • •
H
Siliconix
Performance Curves NCB/NZB See Sedion 4
• Analog Switches • Commutators • Choppers
*~ABSOLUTE MAXIMUM RATINGS (25°C)
Drain-Source Breakdown Voltage ................ 30V
Drain-Gate Breakdown Voltage ................. 30V
Source-Gate Breakdown Voltage ................. 30V
Forward Gate Current ........................ 10mA
.Total Device Dissipation Derate above 25°e
.a.t.T.L.E..A.D..=.2..5.°e.......
... 625mW 5.68 mWre
Operating Junction Temperature Range ..... -65 to +135°e
Storage Temperature Range .............. -65 to +150°C
Lead Temperature
(1/16" from case for 10 seconds) ............... 3000 e
BENEFITS
• Low Cost • Industry Standard Package • Automatic Insertion Package • Fast Switching
trise < 5 ns (2N5638)
• Low Insertion Loss
rDS(on} < 30 n (2N5638)
• Short Sample and Hold Aperture Time Crss <4 pF Plastic
TO-92 See Section 6
o~: GDs c oc Bottom View
G
s
0
i*ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted)
Characteristic
2N5638 2N5639 2N5640 Unit
Min Max Min Max Min Max
Test Conditions
-1
2. s
3T
BVGSS IGSS
Gate-Source Breakdown Voltage
Gate Reverse Current
-30 -30
-1.0 -1.0
-1.0 -1.0
4A
ST
"6 1
-C
10(011) lOSS
Dram Cutoff Current Saturation Dram Current
1.0 1.0 10 1.0 50 25
- 7 VOSlon) Drain-Source ON Voltage
.-
8
Static Oram-5ource ON rOSlon) Resistance
0.5 30
0.5 60
9
1- 0
10 y
I- N
11
rdslon) CIIS Crss
Orain-5ource ON Resistance
Common-Source Input Capacitance
Common-Source Reverse Transfer Capacitance
30 60 10 10 4.0 4.0
-30 V IG=-101JA.VOS=0
-1.0 nA VGS=-15V.VOS=0
-1.0 IJA
TA = +10o"C
1.0 nA VOS = 15 V. VGS = -12 V 12N5638)
=1.0 Ill\, "GS -8 V (2F\J5539}, '-'GS - -6'1 (21'J564C) TA=I~COC
5.0 mA VOS = 20 V, VGS = 0 INote 1)
0.5 V VGS = 0,10 = 12 mA 12NS63B), 10 = 6 rnA 12N5639), 10 = 3 rnA 12N5640)
n100 10 = 1 mA, VGS = 0
100 VGS=O,IO=O
1=1 kHz
10 pF
4.0
VGS = -12 V, VOS = 0
1= 1 MHz
-,
12
1,ll S
14 W
115
Idlon) tr tdlo!!) tl
Turn-On Oelay Time Rise Time Turn-OFF Delay Time Fall Time
4.0 6.0 5.0 8.0 5.0 10
10 20
n8.0
VOO=10V
1010nl=12 mA 12N563BIRL = BOO 12N563BI
n10 nsec VGSlon)= 0
'Olon)= 6,mA 12NS6391 RL = 1.6k 12N56391
n15 VGSloff)= -10 V '010nl=3 mA 12N5640) RL =3.2k 12N56401
30
. JEOEC regIStered data NOTE: 1 Pulse test PW .;; 300 f.JSec, duty cycle';; 3.0%
RL - VOD -lrDS(on! +501 '0
~~~~:!k..t= VGS(on! ~9" -----vGsc••,
~~:~TB~J --i 110%-'~.-1.1.::: "t"r,,'
voo
IcPU~C o1J'F GENERATOR ;_ __
10Kn{ ~
,~OO1"FI
~
NCB/NZB
TO 50 OHM SCOPE B
TO 50 OHM SCOPE A
SCOPE TEKTRONIX 561A OR EQUIVALENT
3-30 Siliconix
.