2N5906

matched dual n-channel JFETs designed for Differential Amplifiers High Input Impedance Amplifiers ABSOLUTE MAXIMUM RATINGS (25°C) Gate-to-Gate Voltage ........................ ±80V Gate-Drain or Gate-Source Voltage ............... -40 V Gate Current ................................ 10 mA Device Dissipation (Each Side), T A =25°C (Derate 3 mWrC) ........................ 367mW Total Device Dissipation, T A =25°C (Derate 4 mWrC) ........................ 500mW Storage Temperature Range .............-65 to +200°C H Siliconix Performance Curves NT See Section 4 BENEFITS Matching Characteristics Specified High Input Impedance IG = 1 pA Max (2N5906-9) TO·78 See Section 6 ~~0, 62 s, 82 Jc S2 0 50 D2 0, '0 06 G2 20 7 0, 10 S, Bottom View ~\°2 [ *ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted) CharactenstlC 1-2. I~ I~ 4 S TA :5' ~ '6' C I, IGSS BVGSS VGS'off) VGS IG Gate Reverse Current Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Gate Source Voltage Gate Operating Current I...! lOSS 9 9" '0.'10 1;;1- 0 CISS 1'_2 V N ens 13 ~ "Is 111_4 I C '0' 15 1- 'n 16 NF Saturation Drain Current Common-Source Forward Transconductance Common-Source Output Conductdnce Common-Source Input Capacitance Common Source Reverse Transfer Capacitance Common-Source Forward Transconductance Common-Source Output Conductance EqUivalent Short CIrCUIt Input NOise Voltage Spot NOise Figure Characteristic 17 '18 1- 19 I_M A 20 T C 1- H I~I N 22 ...