n-channel JFET. 2N5909 Datasheet

2N5909 Datasheet PDF, Equivalent


Part Number

2N5909

Description

dual n-channel JFET

Manufacture

Siliconix

Total Page 1 Pages
PDF Download
Download 2N5909 Datasheet PDF


2N5909 Datasheet
matched dual
n-channel JFETs
designed for
Differential Amplifiers
High Input
Impedance Amplifiers
ABSOLUTE MAXIMUM RATINGS (25°C)
Gate-to-Gate Voltage ........................ ±80V
Gate-Drain or Gate-Source Voltage ............... -40 V
Gate Current ................................ 10 mA
Device Dissipation (Each Side), T A =25°C
(Derate 3 mWrC) ........................ 367mW
Total Device Dissipation, T A =25°C
(Derate 4 mWrC) ........................ 500mW
Storage Temperature Range .........•....-65 to +200°C
H
Siliconix
Performance Curves NT
See Section 4
BENEFITS
Matching Characteristics Specified
High Input Impedance
IG = 1 pA Max (2N5906-9)
TO·78
See Section 6
~~0, 62
s, 82
Jc S2
0 50 D2
0, '0
06 G2
20 7
0, 10
S,
Bottom View
~\°2
[
*ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted)
CharactenstlC
1-2.
I~
I~
4
S
TA
:5' ~
'6' C
I,
IGSS
BVGSS
VGS'off)
VGS
IG
Gate Reverse Current
Gate-Source Breakdown Voltage
Gate-Source Cutoff Voltage
Gate Source Voltage
Gate Operating Current
I...!
lOSS
9 9"
'0.'10
1;;-
1- 0
CISS
1'_2
V
N
ens
13 ~ "Is
111_4
I
C
'0'
15
1-
'n
16 NF
Saturation Drain Current
Common-Source Forward
Transconductance
Common-Source Output Conductdnce
Common-Source Input Capacitance
Common Source Reverse Transfer
Capacitance
Common-Source Forward
Transconductance
Common-Source Output Conductance
EqUivalent Short CIrCUIt Input
NOise Voltage
Spot NOise Figure
Characteristic
17
'18
1-
19
I_M
A
20 T
C
1- H
I~I
N
22 G
1-
23
"Gl-IG2'
IOSSl
IOSS2
9f51
91s2
1VGS1-VGS2'
A1VGS,-VGS2'
AT
Differential Gate Current
Saturation Dram Current RatiO
(Note 1)
Transconductance RatiO
(Note 1)
Differential Gate-Source Voltage
Gate-Source Voltage DIfferential
Drift INote 21
1'24
19os1-90s2 1
Differential Output Conductance
•JEDEC regIstered data
NOTES:
1. Assumes smaller value 1n numerator
2. Measured at end pOints, TA and TB
2N6902-5
Mon Max
-5
-10
-40
·0.6 -46
-4
-3
-3
30 500
70 260
5
3
15
2N5906-9
M,n Max
-2
-5
-40
-06 -45
-4
·1
-1
30 500
70 250
5
3
,5
Unit
pA
VGS=-20V.VOS=0
nA
IG--lpA.VOS=O
V VDS .... 10 V. 10 - , nA
pA VOG '" 10 V,IO;\O 30p.A
nA
pA
pmho
VOS'" 10V, VGS = 0
pF
Test Conditions
I
I 125"C
12SOC
f = 1 kHz
f= 1 MHz
50 150
1
02
50
3
2N5902,6 2N5903.7
Mon Max Mon Max
20 20
02 02
095 1 095 1
097 1 097 1
'50
j.Jmho VOG::: lOV.IO::: 30llA
1
~0'
VOS= 10V.VGS=O
1 dB
f'" 1 kHz
f - lOa Hz,
RG = 10 M
2N5904.8
Mon Max
2N5905.9
M,n Max
URit
Test Conditions
20 20
VOG=10V, 2N5902·5
nA 10 =30I1A.
,02 02
TA"'25"C 2N5906·9
095
0.95 1 -
VOS=10V,VGS=O
,095 1 095
-
f = 1 kHz
5 5 10 15 mV
5 10 20 40
VOG::; lOV, TA- 2Soe
'0;:: 30pA T6 = 12SDC
/NtC
5 10 20 40
TA = _55°C
TB = 25"C
02 02 02 02 pmho
f= 1 kHz
--
Siliconix
3·31


Features Datasheet pdf matched dual n-channel JFETs designed fo r • • • • Differential Amplifie rs • High Input Impedance Amplifiers ABSOLUTE MAXIMUM RATINGS (25°C) Gate-t o-Gate Voltage ........................ ±80V Gate-Drain or Gate-Source Voltag e ............... -40 V Gate Current .. .............................. 10 mA De vice Dissipation (Each Side), T A =25° C (Derate 3 mWrC) ..................... ... 367mW Total Device Dissipation, T A =25°C (Derate 4 mWrC) ............... ......... 500mW Storage Temperature Ran ge .........•....-65 to +200°C H Si liconix Performance Curves NT See Secti on 4 BENEFITS • Matching Characterist ics Specified • High Input Impedance IG = 1 pA Max (2N5906-9) TO·78 See Se ction 6 ~~0, 62 s, 82 Jc S2 0 50 D2 0 , '0 06 G2 20 7 0, 10 S, Bottom Vie w ~°2 [ *ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted) Charact enstlC 1-2. I~ I~ 4 S TA :5' ~ '6' C I, IGSS BVGSS VGS'off) VGS IG Gat e Reverse Current Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Gate Source .
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