2N6911

n-channel JFET Amplifier designed for Infra-red Detector Micropower Pre-amplifier Transducer Impedance Converter Hearing Aid Pre-amplifier ABSOLUTE MAXIMUM RATINGS (25°C) Maximum Supply Voltage (VDD) .............. -30 V Gate Current ................................ 100 mA Total Device Dissipation (25°C) ............. 300 mW Storage Temperature Range ........... -55 to 200°C Operating Temperature Range.......... -55 to 150°C Power Derating .......................... 2.4 mWfC Lead Temperature (10 seconds @ 1116") ........ 300°C H Siliconix Performance Curves NBB See Sedion 4 BENEFITS Reduces Component Count, Lower Circuitry Cost Input Over Voltage Clamp by Two Built-in Diodes Monolithic Source Resistor Low Noise Low Leakage -_.eft --oo ~.G' :. 1 ! ~, 0 r--r---------,1~i':'I ,---, I I : s : 6 HiL__J I b '.I I n~-, ,---, I! I l D! ! G! I I"==-< ,--_. II IL ____- ______ JI TO-12 !-11r.as-----! ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted) Characteristi~ Min Typ Max Unit VGs(ope,) Gate-Source Voltage 0.15 2.8 V IO(oper) Drain Current 5.0 85 p.A Equivalent Short Circuit "n Input NOise Voltage IG4 Forward Signal Current 10 25 nV 'V'HZ ±1 ±10 pA Av Source Follower Gain (AV) 0.75 0.85 VN Z(m) Input Impedance 100 Gil Z(out) Output Impedance 30 45 70 Kil Vf Forward Voltage IG Gate Leakage Current ±1.0 1 25 V pA NF Noise Figure 1 dB NOTE: 1. VG4 = 0 V, Test CondItion implies the gate and 4th lead are shorted. ...