BF256LA

n-channel JFETs designed for UHF Amplifiers Mixers Oscillators H Slllcanlx Performance Curves NH See Sedion 4 BENEFITS High Gain Gpg = 14 dB Typical at 800 MHz Selected lOSS Ranges ABSOLUTE MAXIMUM RATINGS Drain-Gate Voltage _............................ 30 V Drain-Source Voltage ........................... 30 V Reverse Gate-Source Voltage...................... 30 V Forward Gate Current ......................... 50 mA Total Device Dissipation @ 25°C ................ 350 mW Derate above 25°C ...................... 3.5 mW/oC Storage Temperature Range .............. -65 to +150°C Lead Temperature (1/16" from case for 10 seconds) ............. , .260°C TO-92 See Section 6 o~: ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted) INSULATED CASE INSENSITIVE TO LIGHT s DDS e Ge Bottom View m "T1 Neernn- l> m "'T1 eNemrnn- m "'T1 N eeronn- Characteristic Min -1 2S -3 ' T A -4 T 5I 6" C -:; BVOGO Drain-Gate Breakdown Veltage IGSS Gate-Reverse Current VGSloffl Gate-Source Cutoff Voltage lOSS Drain Current at Zero Gate Voltage INote 1) lOSS Selected into Following Groups INote 1) BF256LA BF256LB BF256LC -30 -0.5 3 3 6 11 8 - 9 0 1- 0 y N 11 A -M -12 I C 13 9fs gos Ciss Crss flYfs) Gpg 14 NF Common-Source Forward Transconductance INote 1) Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Cutoff Frequencv INote 2) Common-Gate Neutralized Insertion Power Gain Noise Figure 4.5 ...