n-channel JFET. DN5564 Datasheet

DN5564 Datasheet PDF, Equivalent


Part Number

DN5564

Description

dual n-channel JFET

Manufacture

Siliconix

Total Page 1 Pages
PDF Download
Download DN5564 Datasheet PDF


DN5564 Datasheet
matched dual
n-channel JFETs
H
Siliconix
designed for • • •
Performance Curves NCB-D
See Sedion 4
Wideband Differential
Amplifiers
Commutators
ABSOLUTE MAXIMUM RATINGS (25°C)
Gate-Gate Voltage .......................... ±80V
Gate-Drain or Gate-Source Voltage .....•..•••... -40 V
Gate Current .....•.•••.•.••.•.•..•.•.....•.. 50 rnA
Device Dissipation (Each Side), TA = 25°C
(Derate 2.2 mW/oC) ..•...••..•....•.•.••.• 325mW
Total Device Dissipation, TA = 25°C
(Derate 3.3 mW/oC) •.••..•••••••.•.•.•..•. 650mW
Storage Temperature Range •••.•..••....• -65 to +200°C
Lead Temperature
(1/16" from case for 10 seconds) ........•......300°C
BENEFITS
High Gain
7500 tLmho Minimum gfs
Specified Matching Characteristics
TO-71
See Section 6
~~G, Gz
S, 82
S2
G,
30
0' 02
06
20 0 7 G2
0, ,0
s,
Bottom View
.4.
"
ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted)
1
1'2
I~
14
5'
S
T
A
T
1
IGSS
BVGSS
VGS(off)
VGS(I)
6" C lOSS
1" rOS(on)
8 91.
g-
10
'iT
O
V
N
A
M
90.
Crss
C1SS
-i2
13
1
C
NF
ifn
Characteristic
Gate-Reverse Current
Gate-Source Breakdown Voltage
Gate-Source Cutoff Voltage
Gate-Source Voltage
Saturation Drain Current (Note 1)
Static Drain Source ON Resistance
Common-Source Forward Transconductance
(Nol.')
Common-Source Output Conductance
Common-Source Reverse Transfer Capacitance
Common·Source Input Capacitance
Spot NOise Figure
Equivalent Short Circuit Input NOise Voltage
Characteristics
14
-M
IOSS1
IOSS2
Saturation Drain Current
RaIla, (Nol.' 1and 2)
15 TA IVGS1-VGS2 1
-C
Differential Gate·Source
Voltage
16
H
1
N
AIVGS1-VGS2 1
AT
Gate-5ource Voltage
Oill.r.nlial 0,,11 (Nol. 3)
-G
17
91.1
91.2
(TNroanI•sco1nadnudct2a)nce RatiO
DN6664
Min Max
0.95 1
5
10
10
09S 1
Min
-40
-D.5
5
7500
7000
DN5666
Min Max
0.95 1
10
25
25
0.90 1
Max Unit
-100 pA
-200 nA
-3 V
2
50
100
12,500
65
mA
n
/lmho
3
12
pF
1.0 dB
50
nV
v11z
ON6666
Mm Max Unit
0.9S 1 -
20 mV
SO /IV!
50 ·C
0.90 1 -
Test Conditions
VGS' -20 V, VOS= 0
IG=-l/1A,VOS=O
VOS=15V,10-lnA
VOS =0V, IG =2mA
VOS=15V,VGS=0
10=1mA,VGS=0
I
I 150·C
1= 1kHz
1= 100 MHz
1= 1kHz
VOG=15V,lo=2mA 1= 1MHz
1= 10 Hz, Rg =1M
1= 10Hz
Test Conditions
VOS = 15 V, VGS =0
VOS =15 V, 10 =2mA
TA = 2S·C
TB =12S·C
TA =-S5·C
TB = 2S·C
1= 1kHz
l1li
, NOTES:
1. Pulse test required, pulse width 300 J.lS. duty cycle <: 3%.
2 Assumes smaller value tn numerator.
3. Measured at ends POints, TA and Ta
NCB-O
Silicanix
3-43


Features Datasheet pdf matched dual n-channel JFETs H Siliconi x designed for • • • Performanc e Curves NCB-D See Sedion 4 • Wideba nd Differential Amplifiers • Commutat ors ABSOLUTE MAXIMUM RATINGS (25°C) Ga te-Gate Voltage ....................... ... ±80V Gate-Drain or Gate-Source Vol tage .....•..•••... -40 V Gate Current .....•.•••.•.••. .•..•.•.....•.. 50 rnA Device Dissipation (Each Side), TA = 25°C (D erate 2.2 mW/oC) ..•...••..•... .•.•.••.• 325mW Total Device Dissipation, TA = 25°C (Derate 3.3 mW/ oC) •.••..•••••••. .•.•..•. 650mW Storage Temperat ure Range •••.•..••....• -65 to +200°C Lead Temperature (1/16" from case for 10 seconds) ........•.. ....300°C BENEFITS • High Gain 7500 tLmho Minimum gfs • Specified Matchi ng Characteristics TO-71 See Section 6 ~~G, Gz S, 82 S2 G, 30 0' 02 06 20 0 7 G2 0, ,0 s, Bottom View .4. " ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted) 1 1'2 I~ 14 5' S T A T 1 IGSS BVGSS VGS(off) VGS(I) 6" C lOSS 1" rOS(on) 8 91. g- 10 'iT O V N A M 90. Crss C1.
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