DN5566

matched dual n-channel JFETs H Siliconix designed for Performance Curves NCB-D See Sedion 4 Wideband Differential Amplifiers Commutators ABSOLUTE MAXIMUM RATINGS (25°C) Gate-Gate Voltage .......................... ±80V Gate-Drain or Gate-Source Voltage .......... -40 V Gate Current .................... 50 rnA Device Dissipation (Each Side), TA = 25°C (Derate 2.2 mW/oC) .............. 325mW Total Device Dissipation, TA = 25°C (Derate 3.3 mW/oC) ......... 650mW Storage Temperature Range ....... -65 to +200°C Lead Temperature (1/16" from case for 10 seconds) ..............300°C BENEFITS High Gain 7500 tLmho Minimum gfs Specified Matching Characteristics TO-71 See Section 6 ~~G, Gz S, 82 S2 G, 30 0' 02 06 20 0 7 G2 0, ,0 s, Bottom View .4. " ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted) 1 1'2 I~ 14 5' S T A T 1 IGSS BVGSS VGS(off) VGS(I) 6" C lOSS 1" rOS(on) 8 91. g- 10 'iT O V N A M 90. Crss C1SS -i2 13 1 C NF ifn Characteristic Gate-Reverse Current Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Gate-Source Voltage Saturation Drain Current (Note 1) Static Drain Source ON Resistance Common-Source Forward Transconductance (Nol.') Common-Source Output Conductance Common-Source Reverse Transfer Capacitance Common·Source Input Capacitance Spot NOise Figure Equivalent Short Circuit Input NOise Voltage Characteristics 14 -M IOSS1 IOSS2 Saturation Drain Current RaIla, (Nol.'...