n-channel JFET. DN5567 Datasheet

DN5567 Datasheet PDF, Equivalent


Part Number

DN5567

Description

dual n-channel JFET

Manufacture

Siliconix

Total Page 1 Pages
PDF Download
Download DN5567 Datasheet PDF


DN5567 Datasheet
matched dual
n-channel JFETs
designed for...
• Dual FEY
H
Siliconix
Performance Curves
NCB-D
See Section 4
BENEFITS
• High Density
• Matched Switch Resistance
Constant rOS(on) with Signal
ABSOLUTE MAXIMUM RATINGS (2S0C)
Gate-Gate Voltage .............................±80 V
Gate-Drain or Gate-Source Voltage ............... -40 V
Gate Current ................................ 50 mA
Device Dissipation (Each Side), TA = 25°C
(Derate 2.2 mW;oC) ....................... 325 mW
Total Device Dissipation, TA = 25°C
(Derate 3.3 mW;oC) : ...................... 650 mW
Storage Temperature Range ............-65°C to +200°C
Lead Temperature
(1/16" from case for 10 seconds) ...............300°C
TO-71
See Section 6
~~G, G2
8, S2
'2
G,
30
o' D2
06
.,20 01 G2
D, ,0
Bottom View
J 02
D,
"
ELECTRICAL CHARACTERISTICS (2S0C unless otherwise noted)
1
-~ S
3
------;-
T
A
----:- T
5I
-Sc
~
8D
----g Y
N
10
_M
A
11 T
-C
12 H
IGSS
BVGSS
VGS(off)
VGS(f)
lOSS
rOS(on)
Cgd
Cgs
IOSSI
IOSS2
IVGS1-VGS21
9fsl
9fs2
Characteristic
Gate~Reverse Current
Gate-Sou rce Breakdown Voltage
Gate·Source Cutoff Voltage
Gate-Source Voltage
Saturation Drain Current (Note 1)
Static Drain Souroe ON Resistance
Oraon-Gate Capacitance
Gare-5ource Capacitance
I IMin I\I1!!X I 'J!'!it I
-100 pA
-200 nA
-40
-0.5 -3
V
2.0
5 60 mA
100 11
7
pF
7
Saturation Drain Current
Ratio (Notes 1 and 2)
Differential Gate-Source
Voltage
0.9 1
-
20 mV
Transconductance Ratio
(Notes 1 and 2)
-0.9 1
Te:t Condition;
VGS=-20V.VOS=0
I
15o"C
IG = 1 I'A, VOS = 0
VOS= 15V,10= 1 nA
VOS=OV,IG=2mA
VOS=15V,VGS=0
10= 1 mA,VGS=O
VGS= -10V
VOS= 10V
f= 1 MHz
VOS=15V,VGS=0
f = 1 kHz
NOTES:
NCB-O
1. Pulse test required, pulse width 300 I'S, duty cycle .. 3%.
2. Assumes smaller value in numerator.
3. Measured at end points, TA and TB.
3-44 Silicanix


Features Datasheet pdf matched dual n-channel JFETs designed fo r... • Dual FEY H Siliconix Performa nce Curves NCB-D See Section 4 BENEFITS • High Density • Matched Switch Re sistance • Constant rOS(on) with Sign al ABSOLUTE MAXIMUM RATINGS (2S0C) Gat e-Gate Voltage ........................ .....±80 V Gate-Drain or Gate-Source V oltage ............... -40 V Gate Curre nt ................................ 50 mA Device Dissipation (Each Side), TA = 25°C (Derate 2.2 mW;oC) ............. .......... 325 mW Total Device Dissipat ion, TA = 25°C (Derate 3.3 mW;oC) : .. .................... 650 mW Storage Tem perature Range ............-65°C to +2 00°C Lead Temperature (1/16" from case for 10 seconds) ...............300°C TO-71 See Section 6 ~~G, G2 8, S2 '2 G, 30 o' D2 06 .,20 01 G2 D, ,0 Bo ttom View J 02 D, " ELECTRICAL CHARAC TERISTICS (2S0C unless otherwise noted) 1 -~ S 3 ------;- T A ----:- T 5I -Sc ~ 8D ----g Y N 10 _M A 11 T -C 12 H IGSS BVGSS VGS(off) VGS(f) lOSS rOS(on) Cgd Cgs IOSSI IOSS2 IVGS1-VGS21.
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