n-channel JFET. FN4392 Datasheet

FN4392 Datasheet PDF, Equivalent


Part Number

FN4392

Description

n-channel JFET

Manufacture

Siliconix

Total Page 1 Pages
PDF Download
Download FN4392 Datasheet PDF


FN4392 Datasheet
n-channel JFETs
designed for • • •
Analog Switches
Commutators
Choppers
Integrator Reset Switch
*ABSOLUTE MAXIMUM RATINGS (25°C)
Reverse Gate-Drain or Gate-Source Voltage ___ ..... _-40 V
Gate Current ............... _........... _.... 50 rnA
Total Device Dissipation at 25°C Case Temperature
(Derate 10 mW;oC) ..... , ____ .. _............. 1.8 W
Storage Temperature Range. _... _........ --65 to +200°C
Lead Temperature
(1/16" from case for 60 seconds) ...............300°C
H
Siliconix
Performance Curves NCB
See Section 4
BENEFITS
Low Insertion Loss, High Accuracy in
Test Systems rON
No Offset or Error Voltages Generated
by Closed Switch
Purely Resistive
High Isolation Resistance from
Driver
High Off-Isolation ID(off) < 100 pA
High Speed tON < 20 ns
TO-18
See Section 6
Q
-'m~"
m
'"
o~:
o5
*ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted)
Characteristic
'.--....432!..
IGSS
8VGSS
5
~S
]T IDloff)
I---, .A
81 T
Ig-
'I
c,
VGSlfi
VGSloff)
~
10 IDSS
1ii
-~1:3- VDSlon)
14 rOSlon)
-15 rds(on)
.g~ D CISS
Y
18
~
N
C rss
20 tdlon)
"'21 s t,
-~22 ' W tdloff)
23 tf
Gate Reverse Current
Gate-Source Breakdown Voltage
Drain Cutoff Current
Gate-Source Forward Voltage
Gate-Source Cutoff Voltage
Saturation Dram Current
INot.1I
Dram Source ON Voltage
Static Dram-Source ON Resistance
Dram-Source ON Resistance
Common-Source Input Capacitance
Common-Source Reverse Transfer
Capdcltance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
FN4392
Mon Ma.
-100
-200
-40
100
200
1
-2 -5
25 100
04
60
60
16
5
15
5
35
20
FN4393
Mon Ma. Umt
Test Conditions
-100
-200
pA
nA
VGS =-20 V. VDS =0
150·C
-40 V IG=-lpA,VDS=O
100 pA
200
nA
pA
VDS =20 V VGS =-5 V 150·C
nA
-05
1
-3
V
IG =1mA, VDS =0
VOS =20 V. 10 =1nA
5 60 mA VOS =20 V, VGS =0
04 110 - 3mA
V VGS=O liD =6mA
IID-12mA
100 n VGS O,llo=lmA
100 n VGS O,IID 0
f =1kHz
16 VDS =20 V. VGS =0
5
pF
VOS =0
I
VGS
VGS
=-
--
5V
7V
f =1MHz
VGS--12V
15 VOD - 10 V, VGS(on) - 0
5
50 ns FN4392
1010ni
6
VGS(off)
-7
30 FN4393 3
-5
IEII
RL
16KU
32KH
NOTE'
1 Pulse test reqUired, pulse width = 300 jJS, duty cycle ~ 3%
yoo
5111 1000pF
t---VOUT
o~--r" l' s11000pF
PULSE 0-1
VIN
D RL=(~)-51n
O(onl
5H! RISE OTNIMPUET<P0U5LnSEs
SCOPE
5112
FALL TIME < 0 5 ns
-=- -=- -=- PULSE DUTY CYCLE 1%
NCB
SAMPLING SCOPE
RISE TIME 04 os
INPUT RESISTANCE 50 n
Silicanix
3-47


Features Datasheet pdf n-channel JFETs designed for • • • • Analog Switches • Commutators Choppers • Integrator Reset Switch *ABSOLUTE MAXIMUM RATINGS (25°C) Rever se Gate-Drain or Gate-Source Voltage __ _ ..... _-40 V Gate Current ........... .... _........... _.... 50 rnA Total De vice Dissipation at 25°C Case Temperat ure (Derate 10 mW;oC) ..... , ____ .. _ ............. 1.8 W Storage Temperature Range. _... _........ --65 to +200°C Lead Temperature (1/16" from case for 6 0 seconds) ...............300°C H Sil iconix Performance Curves NCB See Sect ion 4 BENEFITS • Low Insertion Loss, High Accuracy in Test Systems rON • No Offset or Error Voltages Generated b y Closed Switch Purely Resistive High I solation Resistance from Driver • Hig h Off-Isolation ID(off) < 100 pA • Hi gh Speed tON < 20 ns TO-18 See Section 6 Q -'m~" m '" o~: o5 *ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted) Characteristic '.--....432!.. IGSS 8VGSS 5 ~S ]T IDloff) I---, .A 81 T Ig- 'I c, VGSlfi VGSloff) ~ 10 IDSS .
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