J107 Datasheet PDF


Part Number

J107

Description

n-channel JFET

Manufacture

Siliconix

Total Page 1 Pages
PDF Download
Download J107 Datasheet PDF


Features Datasheet pdf ...-.. .0, n-channel JFETs .. •-0 . 0, designed for Analog Switches • • • 1ft .. •.,0 Choppers • Commutators H Siliconix Performance Cu rves NVA See Section 4 BENEFITS • Ver y Low Insertion Loss rOS{on) < 3 n (J10 5) • No Offset or Error Voltages Gene rated by Closed Switch Purely Resistive High Isolation Resistance from Driver TO-92 See Section 6 ABSOLUTE MAXIMUM RATINGS (25°C) Gate-Drain or Gate-Sour ce Voltage ............... - 25 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 50 mA Tot al Device Dissipation at 25°C Ambient (Derate 3.27 mWfC)..................... . 360 mW Operating Temperature Range .. ........... -55 to 135°C Storage Temperature Range.....
Keywords J107, datasheet, pdf, Siliconix, n-channel, JFET, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute, Equivalent

J107 Datasheet
...-..
.0,
n-channel
JFETs
.. -0
.0,
designed for
Analog Switches
1ft
.. .,0 Choppers
Commutators
H
Siliconix
Performance Curves NVA
See Section 4
BENEFITS
• Very Low Insertion Loss
rOS{on) < 3 n (J105)
• No Offset or Error Voltages Generated
by Closed Switch
Purely Resistive
High Isolation Resistance from
Driver
TO-92
See Section 6
ABSOLUTE MAXIMUM RATINGS (25°C)
Gate-Drain or Gate-Source Voltage ............... - 25 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 50 mA
Total Device Dissipation at 25°C Ambient
(Derate 3.27 mWfC)...................... 360 mW
Operating Temperature Range ............. -55 to 135°C
Storage Temperature Range............... -55 to 150°C
Lead Temperature Range
(1/16" from case for 10 seconds) ..............300°C
.~:
ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted)
Plastic
GDo o G
o0
o0
Bottom View
Characteristic
1--'-"Jl:0"5;"r--+-~J'l:0:6"'-+-'~-JTl0--7-1Uni1
"1111 Till IVidA Mill iy.., MdA Mill iyl' ividX
Test Conditions
"251 IGSS
VGS(offl
'3 T
_A
BVGSS
4 T lOSS
51 IO(off)
5 C rOSlon)
Gate Reverse Current (Note 1)
Gate-Source Cutoff Voltage
-4.5
Gate-5ource Breakdown Voltage -25
Drain Saturation Current (Note 2) 500
Drain CU10ff Current (No1e 11
Dram Source ON ReSistance
-3
-10 -2
25
200
3
3
-3
-6 -0.5
-25
100
3
6
-3 nA
-4.5
V
VOS = 0 V, VGS = -15 V
VOS=5V.IO=I/lA
mA
3 nA
8n
VOS= 15V. VGS=OV
VOS=5V.VGS=-lOV
-7 CdQ(off) Dram Gate OFF Capacitance
.J! Cooloffl Source Gate OFF Capacitance
35 35 35
35 35 35
9
0
V
Cdglonl
N+
Dram Gate plus Source Gate
ON Capacitance
pF
160 160 160
A Cso(onl
~M
I
1dlon
Turn On Delay Time
15 15 15
-11 C ~1-r -----R-is-e~T-im-e--------------+--20+~+-~--;2-0~---r~r-20-r~ns
12 1dloff) Turn Off Delay Time
15 15 15
13 1f
Fall Time
20 20 20
VOS=OV,VGS=-10V
VOS=VGS=OV
f= 1 MHz
SWitching Time Test Conditions
Jl05 Jl06 Jl07
VOO
1.5V 15V 15V
VGS(offl -12V -7V -5V
RL 50n 50n 50n
NOTES:
1. Approximately doubles for every 10·C increase In TA.
2. Pulse 1est duration = 300 I'S; duty cycle ~ 3%.
NVA
3-48 Siliconix




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)