n-channel JFET
...-..
.0,
n-channel
JFETs
.. •-0
.0,
designed for
Analog Switches
•
•
•
1ft
.. •.,0 Choppers
• Commutators
H...
Description
...-..
.0,
n-channel
JFETs
.. -0
.0,
designed for
Analog Switches
1ft
.. .,0 Choppers
Commutators
H
Siliconix
Performance Curves NVA See Section 4
BENEFITS
Very Low Insertion Loss
rOS{on) < 3 n (J105)
No Offset or Error Voltages Generated by Closed Switch Purely Resistive High Isolation Resistance from Driver
TO-92 See Section 6
ABSOLUTE MAXIMUM RATINGS (25°C)
Gate-Drain or Gate-Source Voltage ............... - 25 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 50 mA Total Device Dissipation at 25°C Ambient
(Derate 3.27 mWfC)...................... 360 mW Operating Temperature Range ............. -55 to 135°C Storage Temperature Range............... -55 to 150°C Lead Temperature Range
(1/16" from case for 10 seconds) ..............300°C
.~:
ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted)
Plastic
GDo o G
o0 o0 Bottom View
Characteristic
1--'-"Jl:0"5;"r--+-~J'l:0:6"'-+-'~-JTl0--7-1Uni1 "1111 Till IVidA Mill iy.., MdA Mill iyl' ividX
Test Conditions
"251 IGSS VGS(offl
'3 T
_A
BVGSS
4 T lOSS
51 IO(off) 5 C rOSlon)
Gate Reverse Current (Note 1)
Gate-Source Cutoff Voltage
-4.5
Gate-5ource Breakdown Voltage -25
Drain Saturation Current (Note 2) 500
Drain CU10ff Current (No1e 11
Dram Source ON ReSistance
-3 -10 -2
25 200 3 3
-3 -6 -0.5
-25 100 3 6
-3 nA -4.5
V
VOS = 0 V, VGS = -15 V VOS=5V.IO=I/lA
mA 3 nA 8n
VOS= 15V. VGS=OV VOS=5V.VGS=-lOV
-7 CdQ(off) Dram Gate OFF Capacitance
.J! Cooloffl Source ...
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