J110 Datasheet PDF


Part Number

J110

Description

n-channel JFET

Manufacture

Siliconix

Total Page 1 Pages
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Download J110 Datasheet PDF


Features Datasheet pdf n-channel JFETs designed for • • • • Analog Switches • Choppers • C ommutators • Low Noise Audio Amplifie rs ABSOLUTE MAXIMUM RATINGS (25°C) H Siliconix Performance Curves NIP See Se dion 4 BENEFITS • Low Cost •. Autom ated Insertion Package • Low Insertio n, Loss rDS{on) < 8 n (Jl08) • No Off set or Error Voltages Generated by Clos ed Switch Purely Resistive High Isolati on Resistance from Driver • Fast Swit ching td{on) + tr = 5 ns Typical • Lo w Noise en = 6 nV/yHz at 10 Hz, Typ (J1 10) Plastic .... -i .... -o -0 -.... - o .... g Gate-Drain or Gate-Source Vol tage .............. , -25V Gate Current ..................... ' ........ 50mA Total Device Dissipation at 25°C Ambient (Derate 3.27 mWrC) ....
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J110 Datasheet
n-channel JFETs
designed for
Analog Switches
Choppers
Commutators
Low Noise Audio Amplifiers
ABSOLUTE MAXIMUM RATINGS (25°C)
H
Siliconix
Performance Curves NIP
See Sedion 4
BENEFITS
Low Cost
•. Automated Insertion Package
Low Insertion, Loss
rDS{on) < 8 n (Jl08)
No Offset or Error Voltages Generated
by Closed Switch
Purely Resistive
High Isolation Resistance from
Driver
Fast Switching
td{on) + tr = 5 ns Typical
Low Noise
en = 6 nV/yHz at 10 Hz, Typ (J110)
Plastic
....
-i
....
-o
-0
-....
-o
....
g
Gate-Drain or Gate-Source Voltage .............. , -25V
Gate Current ..................... ' ........ 50mA
Total Device Dissipation at 25°C Ambient
(Derate 3.27 mWrC) ................... , .. 360 mW
Operating Temperature Range ............. -55 to 135°C
Storage Temperature Range............. , .-55 to 150°C
Lead Temperature Range
(1 /16" from case for 10 seconds) . , ............ 30QoC
TO·92
See Section 6
,~:
ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted)
G
s
D
GDS 0
D0
Bottom View
Characteristic
12'51 'GSS Gate Reverse Current (Note 1)
VOS(of1) Gate-Source Cutoff Voltage
1'3: BVGSS
I-T
I~~ lOSS
17 ' 0 (011)
'OS(on!
Gate-Source Breakdown Voltage
Dram Saturation Current INote 2)
Dram Cutoff Current (Note 1)
Drain-Source ON Reslstane
11
7 Cdg(off! Dram-Gate OFF Capacitance
IS
Csg(off!
1-
0
9y
Cdg(on!
+
N C,g(on!
I-A
10 M Id(on!
Source-Gate OFF Capacitance
Dram-Gate Plus Source-
Gate ON Capacitance
Turn ON Delav Time
Iii I I,
I-c
1-12 'd(offi
13 If
AlseTime
Turn OFF Delay Time
Fall Time
Jl0B
Jl09
Jll0
Min Typ Max M,n Typ Max Min Typ Max UOit
Test Conditions
-3' -3
-3 nA VOS =OV,VGS =-15V
-3 -10 -2
-6 -05
-4
VOS=5V,10=1~A
V
-25 -25
-25
VOS -OV,I G --l ~A
BO 40
10 rnA V OS -15V,V GS -OV
33
B
15 15
15 15
3 nA V OS =5V,V GS =-10V
!l VOS <; 0 1 V, VGS - OV
25
15
vOS = OV, VGS = -10V
15
pF
f= 1 MHz
85 85
85 VOS = VGS = 0
4 4 4 SWltchmg Time Test Conditions
1
I
1
n, VOO
Jl08
15V
Jl09
l,5V
Jl10
1.5 V
6
6
6
VGS(offi -12V
-7V
-5V
30 30 30 RL 150n 150n 150n
NOTES:
I, ApprOXimately doubles for every 10°C Increase In TA-
2 Pulse Test duration 300 jlS, duty cycle <; 3%
NIP
-
Silicanix
3-49




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