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TPS28226 Dataheets PDF



Part Number TPS28226
Manufacturers Texas Instruments
Logo Texas Instruments
Description High-Frequency 4-A Sink Synchronous MOSFET Drivers
Datasheet TPS28226 DatasheetTPS28226 Datasheet (PDF)

Product Folder Sample & Buy Technical Documents Tools & Software Support & Community Reference Design TPS28226 SLUS791A – JULY 2007 – REVISED SEPTEMBER 2015 TPS28226 High-Frequency 4-A Sink Synchronous MOSFET Drivers 1 Features •1 Drives Two N-Channel MOSFETs with 14-ns Adaptive Dead Time • Wide Gate Drive Voltage: 4.5 V Up to 8.8 V With Best Efficiency at 7 V to 8 V • Wide Power System Train Input Voltage: 3 V Up to 27 V • Wide Input PWM Signals: 2.0 V up to 13.2-V Amplitude • Capable to.

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Product Folder Sample & Buy Technical Documents Tools & Software Support & Community Reference Design TPS28226 SLUS791A – JULY 2007 – REVISED SEPTEMBER 2015 TPS28226 High-Frequency 4-A Sink Synchronous MOSFET Drivers 1 Features •1 Drives Two N-Channel MOSFETs with 14-ns Adaptive Dead Time • Wide Gate Drive Voltage: 4.5 V Up to 8.8 V With Best Efficiency at 7 V to 8 V • Wide Power System Train Input Voltage: 3 V Up to 27 V • Wide Input PWM Signals: 2.0 V up to 13.2-V Amplitude • Capable to Drive MOSFETs with ≥40-A Current per Phase • High Frequency Operation: 14-ns Propagation Delay and 10-ns Rise/Fall Time Allow FSW – 2 MHz • Capable to Propagate <30-ns Input PWM Pulses • Low-Side Driver Sink On-Resistance (0.4 Ω) Prevents dV/dT Related Shoot-Through Current • 3-State PWM Input for Power Stage Shutdown • Space Saving Enable (Input) and Power Good (Output) Signals on Same Pin • Thermal Shutdown • UVLO Protection • Internal Bootstrap Diode • Economical SOIC-8 and Thermally Enhanced 3mm x 3-mm DFN-8 Packages • High Performance Replacement for Popular 3State Input Drivers 2 Applications • Multi-Phase DC-to-DC Converters with Analog or Digital Control • Desktop and Server VRMs and EVRDs • Portable and Notebook Regulators • Synchronous Rectification for Isolated Power Supplies 3 Description The TPS28226 is a high-speed driver for N-channel complimentary driven power MOSFETs with adaptive dead-time control. This driver is optimized for use in variety of high-current one and multi-phase DC-to-DC converters. The TPS28226 is a solution that provides high efficiency, small size and low EMI emissions. The efficiency is achieved by up to 8.8-V gate drive voltage, 14-ns adaptive dead-time control, 14-ns propagation delays and high-current 2-A source and 4-A sink drive capability. The 0.4-Ω impedance for the lower gate driver holds the gate of power MOSFET below its threshold and ensures no shootthrough current at high dV/dt phase node transitions. The bootstrap capacitor charged by an internal diode allows use of N-channel MOSFETs in a half-bridge configuration. Device Information(1) PART NUMBER PACKAGE BODY SIZE (NOM) TPS28226 SOIC (8) VSON (8) 4.90 mm × 3.91 mm 3.00 mm x 3.00 mm (1) For all available packages, see the orderable addendum at the end of the data sheet. Simplified Schematic Vc (4.5V to 8V) TPS28226 6 VDD BOOT 2 Vin (4.5 V to 24V) TL500X VCC 3 OUT 3 FB GND 3 3 UGATE 1 3 PWM PHASE 8 7 ENBL LGATE 5 GND 4 Vout 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. TPS28226 SLUS791A – JULY 2007 – REVISED SEPTEMBER 2015 www.ti.com Table of Contents 1 Features .................................................................. 1 2 Applications ........................................................... 1 3 Description ............................................................. 1 4 Revision History..................................................... 2 5 Pin Configuration and Functions ......................... 3 6 Specifications......................................................... 4 6.1 Absolute Maximum Ratings ...................................... 4 6.2 ESD Ratings ............................................................ 4 6.3 Recommended Operating Conditions....................... 4 6.4 Thermal Information .................................................. 5 6.5 Electrical Characteristics .......................................... 5 6.6 Switching Characteristics .......................................... 6 6.7 Typical Characteristics .............................................. 7 7 Detailed Description ............................................ 11 7.1 Overview ................................................................. 11 7.2 Functional Block Diagram ....................................... 11 7.3 Feature Description................................................. 12 7.4 Device Functional Modes........................................ 17 8 Application and Implementation ........................ 17 8.1 Application Information............................................ 17 8.2 Typical Application ................................................. 18 8.3 System Examples ................................................... 25 9 Power Supply Recommendations...................... 27 10 Layout................................................................... 27 10.1 Layout Guidelines ................................................. 27 10.2 Layout Example .................................................... 28 11 Device and Documentation Support ................. 29 11.1 Device Support .................................................... 29 11.2 Documentation Support ....................................... 29 11.3 Community Resources..........................


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