SUPPLY. TPS9103 Datasheet

TPS9103 Datasheet PDF


Part

TPS9103

Description

POWER SUPPLY

Manufacture

etcTI

Page 22 Pages
Datasheet
Download TPS9103 Datasheet


TPS9103 Datasheet
TPS9103
POWER SUPPLY FOR GaAs POWER AMPLIFIERS
D Charge Pump Provides Negative Gate Bias
for Depletion-Mode GaAs Power Amplifiers
D Buffered Clock Output to Drive Additional
External Charge Pump
D 135-mHigh-Side Switch Controls Supply
Voltage to the GaAs Power Amplifier
D Power-Good Circuitry Prevents High-Side
Switch Turn-on Until Negative Gate Bias is
Present
D Charge Pump Can Be Driven From the
Internal Oscillator or An External Clock
D 10-µA Maximum Standby Current
D Low-Profile (1.2-mm Max Height), 20-Pin
TSSOP Package
GATE_BIAS
VCC
C1–
C1+
BATT_IN
BATT_IN
BATT_IN
PGP
PG
GND
SLVS131A – OCTOBER 1995 – REVISED JULY 1996
PW PACKAGE
(TOP VIEW)
1 20 VDD
2 19 CLK
3 18 BCLK
4 17 GND
5 16 BATT_OUT
6 15 BATT_OUT
7 14 BATT_OUT
8 13 SW_EN
9 12 OSC_EN
10 11 EN
description
The TPS9103 is a highly integrated power supply for depletion-mode GaAs power amplifiers (PA) in cellular
handsets and other wireless communications equipment. Functional integration and low-profile packaging
combine to minimize circuit-board area and component height requirements. The device includes: a p-channel
MOSFET configured as a high-side switch to control the application of power to the PA; a driver for the high-side
switch with a logic-compatible input; a charge pump to provide negative gate-bias voltage; and logic to prevent
turn-on of the high-side switch until gate bias is present. The high-side switch has a typical on-state resistance
of 135 m.
The TPS9103 is available in a 20-pin thin shrink small-outline package (TSSOP) or in chip form. Contact factory
for die sales. The device operates over a junction temperature range of – 25°C to 125°C.
AVAILABLE OPTIONS
PACKAGED DEVICE
CHIP FORM
TA
TSS0P
(Y)
(PW)
– 25°C to 85°C
TPS9103PWLE
TPS9103Y
The PW package is only available left-end taped and reeled
(indicated by the LE suffix on the device type).
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
Copyright © 1996, Texas Instruments Incorporated
1

TPS9103 Datasheet
TPS9103
POWER SUPPLY FOR GaAs POWER AMPLIFIERS
SLVS131A – OCTOBER 1995 – REVISED JULY 1996
functional block diagram
BATT_IN 5, 6, 7
VCC 2
3
VCC
UVLO
18
BCLK
VDD 20
EN 11
OSC_EN 12
REF
+
OSC
Vref
PGP 8
R
C1 + 4
C1 – 3
Inverting
Charge
Pump
GND 10, 17
0.6R
UVDLO
PG
Comparator
3 14, 15, 16
BATT_OUT
13
SW_EN
9 PG
19 CLK
1 GATE_BIAS
2 POST OFFICE BOX 655303 DALLAS, TEXAS 75265


Features Datasheet pdf TPS9103 POWER SUPPLY FOR GaAs POWER AMPL IFIERS D Charge Pump Provides Negative Gate Bias for Depletion-Mode GaAs Powe r Amplifiers D Buffered Clock Output to Drive Additional External Charge Pump D 135-mΩ High-Side Switch Controls Su pply Voltage to the GaAs Power Amplifie r D Power-Good Circuitry Prevents High- Side Switch Turn-on Until Negative Gate Bias is Present D Charge Pump Can Be D riven From the Internal Oscillator or A n External Clock D 10-µA Maximum Stand by Current D Low-Profile (1.2-mm Max He ight), 20-Pin TSSOP Package GATE_BIAS VCC C1– C1+ BATT_IN BATT_IN BATT_IN P GP PG GND SLVS131A – OCTOBER 1995 REVISED JULY 1996 PW PACKAGE (TOP VIE W) 1 20 VDD 2 19 CLK 3 18 BCLK 4 17 GND 5 16 BATT_OUT 6 15 BATT_OUT 7 14 BATT_ OUT 8 13 SW_EN 9 12 OSC_EN 10 11 EN de scription The TPS9103 is a highly integ rated power supply for depletion-mode G aAs power amplifiers (PA) in cellular h andsets and other wireless communicatio ns equipment. Functional integration and low-profile packaging combine t.
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