S34ML04G3

ADVANCE S34ML04G3 4 Gb, 3 V, 1-bit ECC, 2K Page Size, SLC NAND Flash Memory for Embedded Distinctive Characteristics  Density ❐ 4 Gb  Architecture ❐ Input / Output Bus Width: 8 bits ❐ Page Size 4 Gb: (2048 + 128) bytes; 128-byte spare area ❐ Block Size: 64 Pages 4 Gb: 128 KB + 8 KB ❐ Plane Size 4 Gb: 2048 blocks per plane or (256 MB + 16 MB) ❐ Device Size 4 Gb: 2 planes per device or 512 Mbyte  NAND Flash Interface ❐ Open NAND Flash Interface (ONFI) 1.0 compliant ❐ Address, Data, and Commands multiplexed  Supply voltage ❐ 3.3-V device: VCC = 2.7 V ~ 3.6 V  Security ❐ One Time Programmable (OTP) area ❐ Serial number (unique ID) ❐ Hardware program/erase disabled during power transition ❐ Volatile and Permanent Block Protection  Electronic Signature ❐ Manufacturer ID: 01h ❐ Device ID: follow industry standard for single and stacked die implementation  Operating Temperature ❐ Industrial: –40°C to 85°C ❐ Industrial Plus: –40°C to 105°C  Additional Features ❐ Multiplane Program and Erase commands ❐ Copy Back Program ❐ Multiplane Copy Back Program ❐ Reset (FFh) command is required after power-on as a first command Performance  Page Read / Program ❐ Read Page Time (tR): –45 µs (Typ) / Single Plan –55 µs (Typ) / Multi Plane ❐ Program time / Multiplane Program time: 350 µs (Typ)  Block Erase / Multiplane Erase ❐ Block Erase time: 4 ms (Typ)  Reliability ❐ 60,000 Program / Erase cycles (Typ) (with 1-bit ECC per 544 bytes) ❐ 10 Year Data retention (Typ) ❐ Blo...