TRANSISTOR. D998 Datasheet

D998 Datasheet PDF


Part

D998

Description

TRIPLE DIFFUSED NPN TRANSISTOR

Manufacture

KEC

Page 2 Pages
Datasheet
Download D998 Datasheet


D998 Datasheet
SEMICONDUCTOR
TECHNICAL DATA
HIGH POWER AMPLIFIER APPLICATION.
FEATURES
Recommended for 45 50W Audio Frequency
Amplifier Output Stage.
Complementary to KTB778.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Base Current
Collector Power Dissipation (Tc=25 )
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
RATING
120
120
5
10
15
1
80
150
-55 150
UNIT
V
V
V
A
A
W
KTD998
TRIPLE DIFFUSED NPN TRANSISTOR
DIM MILLIMETERS
A
U
C
R
WW
A
B
C
D
16.30 MAX
12.00+_ 0.30
5.50+_ 0.20
1.20 MAX
E 8.00
V F 5.00
G 17.00+_ 0.30
H 0.60+0.15/-0.10
I 2.50
M
K
N
I
J 20.0+_ 0.1
K 4.00
D L 2.00
M 2.20 MAX
N 3.05 MAX
HO
5.45
OO
P 3.50
Q 1.00
R 3.00+_ 0.20
123
S 37.0
T 42.0
U Φ3.40+0.15/-0.10
V 10
1. BASE
W8
2. COLLECTOR
3. EMITTER
TO-3P(H)IS
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
ICBO
IEBO
V(BR)CEO
hFE (Note)
VCE(sat)
VBE
fT
Collector Output Capacitance
Cob
Note : hFE Classification R:55 110, O:80 160
TEST CONDITION
VCB=120V, IE=0
VEB=5V, IC=0
IC=50mA, IB=0
VCE=5V, IC=1A
IC=5A, IB=0.5A
VCE=5V, IC=5A
VCE=5V, IC=1A
VCB=10V, IE=0, f=1MHz
MIN.
-
-
120
55
-
-
-
-
TYP.
-
-
-
-
-
-
12
170
MAX.
10
10
-
160
2.5
1.5
-
-
UNIT
A
A
V
V
V
MHz
pF
2009. 10. 7
Revision No : 2
1/2

D998 Datasheet
KTD998
IC - VCE
12
10
8
6
4
2
0
0
COMMON EMITTER
400 300 Tc=25 C
200
100
50
I B =20mA
0
2 4 6 8 10 12 14
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE(sat) - IC
1
COMMON EMITTER
0.5 IC /IB=10
0.3
0.1 Tc=100 C
0.05 Tc=25 C
Tc=-25 C
0.03
0.01
0.01 0.03
0.1
0.3
1
3
COLLECTOR CURRENT IC (A)
10
Pc - Ta
100
1
80
60
2
40 3
20 4
5
0
0
40
1 Ta=Tc
INFINITE HEAT SINK
2 300x300x2mm Al
HEAT SINK
3 200x200x2mm Al
HEAT SINK
4 100x100x2mm Al
HEAT SINK
5 NO HEAT SINK
80 120 160 200 240
AMBIENT TEMPERATURE Ta ( C)
2009. 10. 7
Revision No : 2
hFE - IC
1k
COMMON EMITTER
500 VCE =5V
300
Tc=100 C
100
Tc=25 C
Tc=-25 C
50
30
10
0.01 0.03 0.1
0.3
1
3
COLLECTOR CURRENT IC (A)
10
SAFE OPERATING AREA
30
15 I C MAX(PULSED) *
10 I C MAX(CONTINUOUS)
3 DCTcO=P2E5R5C0A0TmIOS N *
t=1mS *
10mS *
100mS *
1
* SINGLE NONREPETITIVE
PULSE Tc=25 C
0.3 CURVES MUST BE DERATED
LINEARLY WIHT INCREASE
IN TEMPERATURE.
0.1
1 3 10 30 100 300
COLLECTOR-EMITTER VOLTAGE VCE (V)
2/2


Features Datasheet pdf SEMICONDUCTOR TECHNICAL DATA HIGH POWER AMPLIFIER APPLICATION. FEATURES Recomme nded for 45 50W Audio Frequency Amplifi er Output Stage. Complementary to KTB77 8. MAXIMUM RATING (Ta=25 ) CHARACTERI STIC Collector-Base Voltage Collector -Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Base Curre nt Collector Power Dissipation (Tc=25 ) Junction Temperature Storage Temper ature Range SYMBOL VCBO VCEO VEBO IC I CP IB PC Tj Tstg RATING 120 120 5 10 1 5 1 80 150 -55 150 UNIT V V V A A W L BE KTD998 TRIPLE DIFFUSED NPN TRANSI STOR DIM MILLIMETERS A U C R WW A B C D 16.30 MAX 12.00+_ 0.30 5.50+_ 0.2 0 1.20 MAX GF E 8.00 V F 5.00 G 17.00 +_ 0.30 H 0.60+0.15/-0.10 S T I 2.50 M K N I J 20.0+_ 0.1 K 4.00 J D L 2.00 M 2.20 MAX N 3.05 MAX HO 5.4 5 OO P 3.50 Q 1.00 R 3.00+_ 0.20 12 3 S 37.0 T 42.0 U Φ3.40+0.15/-0.10 V 10 1. BASE W8 2. COLLECTOR 3. EMI TTER TO-3P(H)IS P Q ELECTRICAL CHARA CTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Collector Cut-off C.
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