MOSFET. ECX10N20 Datasheet

ECX10N20 Datasheet PDF


Part

ECX10N20

Description

N-CHANNEL LATERAL MOSFET

Manufacture

EXICON

Page 4 Pages
Datasheet
Download ECX10N20 Datasheet


ECX10N20 Datasheet
ECX10N20
N CHANNEL LATERAL MOSFET
N Channel Lateral Mosfet
Designed speci cally for linear audio ampli er applications
High-speed for high bandwidth ampli ers
Reduced Vds sat
High voltage rating - 200V
TO-247 plastic package
Enhanced oscillation suppression in multi-device applications
Complementary P-channel available – ECX10P20
ABSOLUTE MAXIMUM RATINGS
(TC= 25°C unless otherwise stated)
VDSS Drain – Source Voltage
200V
VGSS Gate – Source Voltage
+/-14V
ID Continuous Drain Current
8A
IDR Body Drain Diode Current
8A
PD Allowable Power Dissipation* Tcase = 25°C
Tch Channel Temperature
125W
150°C
Tstg Storage Temperature Range
-55 to +150°C
*Thermal Resistance, Junction To Case
1.0°C/W
www.exicon.info
Exicon products are available at www.profusionplc.com
Tel: +44 (0)1702 543500 FFaaxx::++4444((00))11770022554433770000
ReRve:v3:.31.1
1

ECX10N20 Datasheet
ECX10N20
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Symbols
BVDSX
VGS(o )
VDS(sat)*
|yfs|*
IDSX
Parameters
Drain-Source
Breakdown Voltage
Gate-Source Cut-o
Voltage
Drain-Source Saturation
Voltage
Forward Transfer
Admittance
Drain-Source Cut-O
Current
Test Conditions
VGS = 10V      ID = 10mA
Min. Typ Max. Units
200 V
VDS = 10V I D = 100mA 0.15
1.5 V
VGD  = 0
ID = 8A
10 V
VD  S= 10V
VG  S = 10V
IDS = 3A
0.7
VD  S= 200V
2 S( )
10 mA
* Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2%
DYNAMIC CHARACTERISTICS
Symbols
Ciss
Coss
Crss
t on
to
Parameters
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-On Time
Turn-O Time
Test Conditions
VGS= 0
VDS= 10V
f = 1.0MHz
Min. Typ Max. Units
500 pF
300 pF
10 pF
VDS= 20V
ID = 7A
100 ns
50 ns
www.exicon.info
Exicon products are available at www.profusionplc.com
Tel: +44 (0)1702 543500 FFaaxx::++4444((00))11770022554433770000
ReRve:v3:.31.1
12


Features Datasheet pdf ECX10N20 N CHANNEL LATERAL MOSFET N Cha nnel Lateral Mosfet Designed speci call y for linear audio ampli er application s High-speed for high bandwidth ampli e rs Reduced Vds sat High voltage rating - 200V TO-247 plastic package Enhanced oscillation suppression in multi-device applications Complementary P-channel a vailable – ECX10P20 ABSOLUTE MAXIMUM RATINGS (TC= 25°C unless otherwise s tated) VDSS Drain – Source Voltage 200V VGSS Gate – Source Voltage +/- 14V ID Continuous Drain Current 8A I DR Body Drain Diode Current 8A PD All owable Power Dissipation* Tcase = 25°C Tch Channel Temperature 125W 150°C Tstg Storage Temperature Range -55 to +150°C *Thermal Resistance, Junction To Case 1.0°C/W www.exicon.info Exi con products are available at www.profu sionplc.com Tel: +44 (0)1702 543500 FFa axx::++4444((00))11770022554433770000 ReRve:v3:.31.1 1 ECX10N20 ELECTRICAL CHARACTERISTICS (TC = 25°C unless ot herwise stated) Symbols BVDSX VGS(o ) VDS(sat)* |yfs|* IDSX Parameters Dra.
Keywords ECX10N20, datasheet, pdf, EXICON, N-CHANNEL, LATERAL, MOSFET, CX10N20, X10N20, 10N20, ECX10N2, ECX10N, ECX10, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute, Equivalent




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)