MOSFET. ECF20N20 Datasheet

ECF20N20 Datasheet PDF


Part

ECF20N20

Description

N & P-CHANNEL LATERAL MOSFET

Manufacture

EXICON

Page 4 Pages
Datasheet
Download ECF20N20 Datasheet


ECF20N20 Datasheet
ECF20N20
HIGH POWER 250W
HIGH QUALITY AUDIO AMPLIFIER APPLICATIONS
N & P CHANNEL LATERAL MOSFETs
T03
8.70
1.50
11.60
+0.3
25.00
10.90 + 0.1
3
21
MECHANICAL DATA
R4.00 + 0.1
ABSOLUTE MAXIMUM RATINGS
(TC= 25°C unless otherwise stated)
VDSX
VGSS
ID
ID(PK)
Drain – Source Voltage
Gate – Source Voltage
Continuous Drain Current
Body Drain Diode
PD
Tstg
Tj
R0JC
Total Power Dissipation @ (T case = 25°C) C
Storage Temperature Range
Maximum Operating Junction Temperature
Thermal Resistance Junction - case
1. GATE
2. DRAIN
3 SOURCE
dimensions in mm
(ECF20)20
200V
+- 14V
16A
16A
250W
-55 to 150°C
150°C
0.5°C/W
www.exicon.info
Exicon products are available at www.profusionplc.com
Tel: +44 (0)1702 543500 FFaaxx::++4444((00))11770022554433770000
ReRve:v3:.31.1
1

ECF20N20 Datasheet
ECF20N20
STATIC CHARACTERISTICS
Characteristic
(TC= 25°C unless otherwise stated)
Test Conditions
MIN TYP MAX UNIT
BVDSX
Drain – Source Breakdown Voltage ID = 10mA
(ECF20)20
200
V
BVGSS
V GS(OFF)
V DS(SAT)*
I DSX
Gate – Source Breakdown Voltage VDS = 0
Gate - Source Cut-O Voltage
Drain - Source Saturation Voltage
VDS = 10V
VGD = 0
Drain - Source Cut - O Current
VGS = -10V
IG=-+100uA
ID = 100mA
ID = 16A
VDS = 160V
(ECF20)16
VDS =200V
(ECF20)20
-+14
0.10
V
1.5 V
12 V
10
mA
10
Yfs*
Forward Transfer Admittance
VDS = 10V
ID = 3A
1.4
4S
DYNAMIC CHARACTERISTICS (TC= 25°C unless otherwise stated)
Characteristic
Test Conditions
N-Channel P-Channel UNIT
Ciss Input Capacitance
Coss Output Capacitance
VDS= 10V
f = 1MHz
950
550
1900
900
pF
Crss Reverse Transfer Capacitance
20 60
ton Turn-on Time
to Turn-o Time
VDS= 20V
ID = 7A
160
80
150
110C 80
ns
* Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2%
www.exicon.info
Exicon products are available at www.profusionplc.com
Tel: +44 (0)1702 543500 FFaaxx::++4444((00))11770022554433770000
ReRve:v3:.31.1
12


Features Datasheet pdf ECF20N20 HIGH POWER 250W HIGH QUALITY A UDIO AMPLIFIER APPLICATIONS N & P CHANN EL LATERAL MOSFETs T03 8.70 1.50 11. 60 +0.3 25.00 10.90 + 0.1 3 39.00 R 2.00 max 01.0 30.2 + 0.15 16.90 + 0.15 21 MECHANICAL DATA R4.00 + 0.1 ABSO LUTE MAXIMUM RATINGS (TC= 25°C unless otherwise stated) VDSX VGSS ID ID(PK) Drain – Source Voltage Gate – Sour ce Voltage Continuous Drain Current Bod y Drain Diode PD Tstg Tj R0JC Total P ower Dissipation @ (T case = 25°C) C S torage Temperature Range Maximum Operat ing Junction Temperature Thermal Resist ance Junction - case 1. GATE 2. DRAIN 3 SOURCE dimensions in mm (ECF20)20 200 V +- 14V 16A 16A 250W -55 to 150°C 150 °C 0.5°C/W www.exicon.info Exicon p roducts are available at www.profusionp lc.com Tel: +44 (0)1702 543500 FFaaxx:: ++4444((00))11770022554433770000 ReRve :v3:.31.1 1 ECF20N20 STATIC CHARACTE RISTICS Characteristic (TC= 25°C unle ss otherwise stated) Test Conditions MIN TYP MAX UNIT BVDSX Drain – Source Breakdown Voltage ID = 10mA (ECF.
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