(PDF) ECW20N20 Datasheet PDF | EXICON





ECW20N20 Datasheet PDF

Part Number ECW20N20
Description N-CHANNEL LATERAL MOSFET
Manufacture EXICON
Total Page 4 Pages
PDF Download Download ECW20N20 Datasheet PDF

Features: Datasheet pdf ECW20N20 N CHANNEL LATERAL MOSFET N Cha nnel Lateral Mosfet Designed speci call y for linear audio ampli er application s High-speed for high bandwidth ampli e rs High voltage rating - 200V TO-264 pl astic package Enhanced oscillation supp ression in multi-device applications Co mplementary P-channel available – ECW 20P20 ABSOLUTE MAXIMUM RATINGS (TC= 2 5°C unless otherwise stated) VDSS Dra in – Source Voltage 200V VGSS Gate – Source Voltage +/-20V ID Continuo us Drain Current 16A IDR Body Drain D iode Current 16A PD Allowable Power D issipation* Tcase = 25°C Tch Channel T emperature 250W 150°C Tstg Storage T emperature Range -55 to +150°C *Ther mal Resistance, Junction To Case 0.5 d eg/watt WARNING: These lateral mosfets do not include a G-S protection networ k and care must therefore be taken with static handling precautions and the ap propriate protection in the ampli er ci rcuit. www.exicon.info Exicon product s are available at www.profusionplc.com Tel: +44 (0)1702 543500 FFaaxx::+.

Keywords: ECW20N20, datasheet, pdf, EXICON, N-CHANNEL, LATERAL, MOSFET, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute, Equivalent

ECW20N20 datasheet
ECW20N20
N CHANNEL LATERAL MOSFET
N Channel Lateral Mosfet
Designed speci cally for linear audio ampli er applications
High-speed for high bandwidth ampli ers
High voltage rating - 200V
TO-264 plastic package
Enhanced oscillation suppression in multi-device applications
Complementary P-channel available – ECW20P20
ABSOLUTE MAXIMUM RATINGS
(TC= 25°C unless otherwise stated)
VDSS Drain – Source Voltage
200V
VGSS Gate – Source Voltage
+/-20V
ID Continuous Drain Current
16A
IDR Body Drain Diode Current
16A
PD Allowable Power Dissipation* Tcase = 25°C
Tch Channel Temperature
250W
150°C
Tstg Storage Temperature Range
-55 to +150°C
*Thermal Resistance, Junction To Case
0.5 deg/watt
WARNING: These lateral mosfets do not include a G-S protection network and
care must therefore be taken with static handling precautions and the
appropriate protection in the ampli er circuit.
www.exicon.info
Exicon products are available at www.profusionplc.com
Tel: +44 (0)1702 543500 FFaaxx::++4444((00))11770022554433770000
ReRve:v3:.31.1
1

ECW20N20 datasheet
ECW20N20
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Symbols
BVDSX
I GSS
VGS(o )
VDS(sat)*
|yfs|*
IDSX
Parameters
Drain-Source
Breakdown Voltage
Gate-Source Leakage
Current
Gate-Source Cut-o
Voltage
Drain-Source Saturation
Voltage
Forward Transfer
Admittance
Drain-Source Cut-O
Current
Test Conditions
VGS = -10V      ID = 10mA
Min. Typ Max. Units
200 V
VDS = 0
VGS = ±20V
VDS = 10V ID = 100mA 0.1
VG  D = 0
ID = 16A
100 µA
1.5 V
12 V
VDS = 10V IDS = 3A
1.4
VGS = -10V VDS = 200V
4 S( )
10 mA
* Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2%
DYNAMIC CHARACTERISTICS
Symbols
Ciss
Coss
Crss
t on
to
Parameters
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-On Time
Turn-O Time
Test Conditions
VGS= 0
VDS= 10V
f = 1.0MHz
Min. Typ Max. Units
900 pF
500 pF
16 pF
VDS= 20V
ID = 7A
155 ns
90 ns
www.exicon.info
Exicon products are available at www.profusionplc.com
Tel: +44 (0)1702 543500 FFaaxx::++4444((00))11770022554433770000
ReRve:v3:.31.1
12




Index : 0  1  2  3   4  5  6  7   8  9  A  B   C  D  E  F   G  H  I  J   K  L  M  N   O  P  Q  R   S  T  U  V   W  X  Y  Z
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)