Document
ECW20N20
N CHANNEL LATERAL MOSFET
N Channel Lateral Mosfet Designed speci cally for linear audio ampli er applications High-speed for high bandwidth ampli ers High voltage rating - 200V TO-264 plastic package Enhanced oscillation suppression in multi-device applications Complementary P-channel available – ECW20P20
ABSOLUTE MAXIMUM RATINGS
(TC= 25°C unless otherwise stated)
VDSS Drain – Source Voltage
200V
VGSS Gate – Source Voltage
+/-20V
ID Continuous Drain Current
16A
IDR Body Drain Diode Current
16A
PD Allowable Power Dissipation* Tcase = 25°C Tch Channel Temperature
250W 150°C
Tstg Storage Temperature Range
-55 to +150°C
*Thermal Resistance, Junction To Case
0.5 deg/watt
WARNING: These lateral mosfets do not include a G-S protection network and care must therefore be taken with static handling precautions and the appropriate protection in the ampli er circuit.
www.exicon.info
Exicon products are available at www.profusionplc.com
Tel: +44 (0)1702 543500 FFaaxx::++4444((00))11770022554433770000
ReRve:v3:.31.1
1
ECW20N20
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Symbols BVDSX
I GSS VGS(o ) VDS(sat)* |yfs|* IDSX
Parameters Drain-Source Breakdown Voltage Gate-Source Leakage Current Gate-Source Cut-o Voltage Drain-Source Saturation Voltage Forward Transfer Admittance Drain-Source Cut-O Current
Test Conditions VGS = -10V ID = 10mA
Min. Typ Max. Units 200 V
VDS = 0
VGS = ±20V
VDS = 10V ID = 100mA 0.1
VG D = 0
ID = 16A
100 µA 1.5 V 12 V
VDS = 10V IDS = 3A
1.4
VGS = -10V VDS = 200V
4 S( ) 10 mA
* Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2%
DYNAMIC CHARACTERISTICS
Symbols Ciss Coss Crss
t on to
Parameters Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-O Time
Test Conditions
VGS= 0 VDS= 10V f = 1.0MHz
Min. Typ Max. Units 900 pF 500 pF 16 pF
VDS= 20V ID = 7A
155 ns 90 ns
www.exicon.info
Exicon products are available at www.profusionplc.com
Tel: +44 (0)1702 543500 FFaaxx::++4444((00))11770022554433770000
ReRve:v3:.31.1
12
ECW20N20
GENERAL CHARACTERISTICS (T = 25°C unless otherwise stated)
Drain Current (A)
20 18 16 14 12 10
8 6 4 2 0
0
Typical Output Characteristics
VGS
7V 6V
PCH =250W
5V
4V 3V
20 VDS (V)
1.5V
2V
Transfer Characteristics
25 -25°C
20 25°C
15 +75°C
10
5
0
0 2 4 6 8 10 Gate - Source Voltage (V)
Drain Current (A)
Drain Current (A)
18 16 14 12 10
8 6 4 2 0
0
Typical Output Characteristics
8V 6V
4V
2V 1.5V
2468 Drain -Source Voltage (V)
10
Typical Transfer Charcteristic
0.7 0.6
-25°C 0.5 0.4 0.3 0.2 0.1
0 0 0.5 Gate - Source Voltage (V)
1
Drain Current (A)
Drain - Source Voltage (V)
Drain-Source vs Gate-Source Voltage
14 12 10
8 6 4 2 0
0
246 Gate-Source Voltage (V)
ID = 9A ID = 6A ID = 3A
8
Transconductance (s)
Transconductance
10 VDS= 20V
1
0.1 0
5 10 Drain Current (A)
15
www.exicon.info
Exicon products are available at www.profusionplc.com
Tel: +44 (0)1702 543500 FFaaxx::++4444((00))11770022554433770000
ReRve:v3:.31.1
143
ECW20N20
Capacitance (pF) Drain Current (A)
1600 1400 1200 1000
800 600 400 200
0 0
Typical Capacitance vs Gate -Source Voltage (-V)
CISS
COSS
5 Gate-Source Voltage (V)
CRSS
Forward Bias Safe Operating Area
100
10
1
200V 160V
0.1
0.01 1
10 100 Drain - Source Voltage (V)
1000
1.80 (0.071) 2.01 (0.079)
4.60 (0.181) 5.21 (0.205)
19.51 (0.768) 20.49 (0.807)
3.10 (0.122 3.48 (0.137
25.48 (1.003) 26.49 (1.043)
5.79 (0.228) 6.20 (0.244)
0.48 (0.019) 0.84 (0.033) 2.59 (0.102) 3.00 (0.118)
MECHANICAL DATA
19.81 (0.780) 21.39 (0.842)
2.29 (0.090) 2.69 (0.106)
123
2.29 (0.090) 2.69 (0.106)
2.79 (0.110) 3.18 (0.125)
0.76 (0.030) 1.30 (0.051)
5.45 (0.215) BSC 2 plcs.
1. GATE 2. SOURCE 3. DRAIN dimensions in mm(inches)
www.exicon.info
Exicon products are available at www.profusionplc.com
Tel: +44 (0)1702 543500 FFaaxx::++4444((00))11770022554433770000
ReRve:v3:.31.1
14
.