MOSFET. ECW20P20-Z Datasheet

ECW20P20-Z Datasheet PDF


Part

ECW20P20-Z

Description

P-CHANNEL LATERAL MOSFET

Manufacture

EXICON

Page 4 Pages
Datasheet
Download ECW20P20-Z Datasheet


ECW20P20-Z Datasheet
ECW20P20-Z
P CHANNEL LATERAL MOSFET
P Channel Lateral Mosfet
Designed speci cally for linear audio ampli er applications
High-speed for high bandwidth ampli ers
High voltage rating - 200V
TO-264 plastic package
Enhanced oscillation suppression in multi-device applications
Complementary N-channel available – ECW20N20
ABSOLUTE MAXIMUM RATINGS
(TC= 25°C unless otherwise stated)
VDSS Drain – Source Voltage
-200V
VGSS Gate – Source Voltage
+/-20V
ID Continuous Drain Current
-16A
IDR Body Drain Diode Current
-16A
PD Allowable Power Dissipation* Tcase = 25°C
Tch Channel Temperature
250W
150°C
Tstg Storage Temperature Range
-55 to +150°C
*Thermal Resistance, Junction To Case
0.5 deg/watt
WARNING: These lateral mosfets do not include a G-S protection network and
care must therefore be taken with static handling precautions and the
appropriate protection in the ampli er circuit.
www.exicon.info
Exicon products are available at www.profusionplc.com
Tel: +44 (0)1702 543500 FFaaxx::++4444((00))11770022554433770000
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ECW20P20-Z Datasheet
ECW20P20-Z
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Symbols
BVDSX
I GSS
VGS(o )
VDS(sat)*
|yfs|*
IDSX
Parameters
Drain-Source
Breakdown Voltage
Gate-Source Leakage
Current
Gate-Source Cut-o
Voltage
Drain-Source Saturation
Voltage
Forward Transfer
Admittance
Drain-Source Cut-O
Current
Test Conditions
VGS = -10V      ID = -10mA
Min. Typ Max. Units
-200 V
VDS = 0
VGS = ±20V
VDS = -10V ID = -100mA -0.1
VG  D = 0
ID = -16A
100 µA
-1.5 V
-12 V
VDS = 10V IDS = -3A
1.4
VGS = -10V VDS = -200V
4 S( )
-10 mA
* Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2%
DYNAMIC CHARACTERISTICS
Symbols
Ciss
Coss
Crss
t on
to
Parameters
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-On Time
Turn-O Time
Test Conditions
VGS= 0
VDS= -10V
f = 1.0MHz
Min. Typ Max. Units
1850
pF
850 pF
55 pF
VDS= -20V
ID = 7A
150 ns
105 ns
www.exicon.info
Exicon products are available at www.profusionplc.com
Tel: +44 (0)1702 543500 FFaaxx::++4444((00))11770022554433770000
ReRve:v3:.31.1
12


Features Datasheet pdf ECW20P20-Z P CHANNEL LATERAL MOSFET P C hannel Lateral Mosfet Designed speci ca lly for linear audio ampli er applicati ons High-speed for high bandwidth ampli ers High voltage rating - 200V TO-264 plastic package Enhanced oscillation su ppression in multi-device applications Complementary N-channel available – E CW20N20 ABSOLUTE MAXIMUM RATINGS (TC= 25°C unless otherwise stated) VDSS D rain – Source Voltage -200V VGSS Ga te – Source Voltage +/-20V ID Conti nuous Drain Current -16A IDR Body Dra in Diode Current -16A PD Allowable Po wer Dissipation* Tcase = 25°C Tch Chan nel Temperature 250W 150°C Tstg Stor age Temperature Range -55 to +150°C *Thermal Resistance, Junction To Case 0.5 deg/watt WARNING: These lateral mo sfets do not include a G-S protection n etwork and care must therefore be taken with static handling precautions and t he appropriate protection in the ampli er circuit. www.exicon.info Exicon pr oducts are available at www.profusionplc.com Tel: +44 (0)1702 543500 FFaa.
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